Electronics-Component Parts and Materials(Date:2000/05/12)

Presentation
表紙

,  

[Date]2000/5/12
[Paper #]
目次

,  

[Date]2000/5/12
[Paper #]
Fabrication zinc oxide thin films by reactive sihilded vacuum arc ion plating

Keisaku Kimura,  Ryuichi Miyano,  Hirofumi Takikawa,  Tateki Sakakibara,  

[Date]2000/5/12
[Paper #]ED2000-29, CPM2000-14, SDM2000-29
Conductivity type control of ZnO

Nattawuth Buthrath,  Singh Aran Vir,  Yoshihito Hiroe,  Akihiro Wakahara,  Akira Yoshida,  

[Date]2000/5/12
[Paper #]ED2000-30, CPM2000-15, SDM2000-30
Theoretical analysis of band structure of strained β-FeSi_2

Kenji Tsuchiya,  Xiaoping Wu,  Akihiro Wakahara,  Akira Yoshida,  

[Date]2000/5/12
[Paper #]ED2000-31, CPM2000-16, SDM2000-31
Growth of CuGaS_2 with buried SiO_2 structure by Epitaxial lateral overgrowth

Akimitsu Ikeda,  masanori Hibi,  Hideto Miyake,  Kazumasa Hiramatsu,  

[Date]2000/5/12
[Paper #]ED2000-32, CPM2000-17, SDM2000-32
Growth characteristics of CdS layers on(100)GaAs by metalorganic vapor phase epitaxy

H.B.Samion H,  Yasumitsu Tomita,  Yusuke Masuda,  Kazuhito Yasuda,  

[Date]2000/5/12
[Paper #]ED2000-33, CPM2000-18, SDM2000-33
Development of Room Temperature, High-Resolution Detector for High-energy radiation

A Nakamura,  D Noda,  T Aoki,  Y Hatanaka,  

[Date]2000/5/12
[Paper #]ED2000-34, CPM2000-19, SDM2000-34
Etching of silicon related materials using trifluoro-athetyl-fluoride gas

Yoji Saito,  Hirofumi Yamazaki,  Isamu Mouri,  

[Date]2000/5/12
[Paper #]ED2000-35, CPM2000-20, SDM2000-35
Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment(2)

Koichi Tokuda,  Tatsuya Ibe,  Yoji Saito,  

[Date]2000/5/12
[Paper #]ED2000-36, CPM2000-21, SDM2000-36
Industry growth process of nitrogen at oxynitridation, and effect to the composition of film

Akira Kawasaki,  Masayuki Suzuki,  Yoji Saito,  

[Date]2000/5/12
[Paper #]ED2000-37, CPM2000-22, SDM2000-37
SiC thin films deposition by plasma CVD

H Nonaka,  T Muramatsu,  Y Xu,  H Anma,  T Aoki,  Y Hatanaka,  

[Date]2000/5/12
[Paper #]ED2000-38, CPM2000-23, SDM2000-38
Pseudo-binary phase diagram and crystal growth of Y_yNd_<1-y>Ba_2Cu_3O_x

T Mori,  D.K.Aswal D,  T Koyama,  M Kumagawa,  Y Hayakawa,  

[Date]2000/5/12
[Paper #]ED2000-39, CPM2000-24, SDM2000-39
Photoluminescence spectroscopy of resonant tunneling through InAs self-assembled quantum dots

Tutaka Ohno,  Shigeru Kishimoto,  Koichi Maezawa,  Takashi Mizutani,  

[Date]2000/5/12
[Paper #]ED2000-40, CPM2000-25, SDM2000-40
Growth of InGaAs layer on GaAs off substrates by metal organic chemical vapor deposition

M Masuda,  K Kuwahara,  S Fuke,  Y Takano,  

[Date]2000/5/12
[Paper #]ED2000-41, CPM2000-26, SDM2000-41
Growth of InGaSb under Reduced Gravity using an Airplane and 1G conditions

T Nakamura,  Y Hayakawa,  K Balakrishnan,  N Shibata,  H Komatsu,  N Murakami,  T Yamada,  D Krishnamurthy,  T Koyama,  M Miyazawa,  M Kumagawa,  

[Date]2000/5/12
[Paper #]ED2000-42, CPM2000-27, SDM2000-42
Study on the LPE growth of InGaAs pyramidal layers on(100)GaAs substrates

K Balakrishnan,  S Iida,  T Koyama,  M Kumagawa,  Y Hayakawa,  

[Date]2000/5/12
[Paper #]ED2000-43, CPM2000-28, SDM2000-43
[OTHERS]

,  

[Date]2000/5/12
[Paper #]