Presentation 2000/5/12
Development of Room Temperature, High-Resolution Detector for High-energy radiation
A Nakamura, D Noda, T Aoki, Y Hatanaka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The p-type CdZnTe and n-type CdSeTe were grown on CdTe substrate by remote plasma enhanced metal organic chemical vapor deposition(RPE-MOCVD). Nitrogen radical incorporated in the film acted as an accepter of p-type CdZnTe film. Iodine was used for donor of n-type CdSeTe film. The resulted diodes showed good I-V characteristics. Especially, very low leakage current was observed at the high reverse bias voltage of 250V. Furthermore excimer laser was radiated in order to clean the surface, resulting in the improvement of the device characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) RPE-MOCVD / CdZnTe / CdSeTe / excimer laser
Paper # ED2000-34, CPM2000-19, SDM2000-34
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Conference Information
Committee CPM
Conference Date 2000/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Room Temperature, High-Resolution Detector for High-energy radiation
Sub Title (in English)
Keyword(1) RPE-MOCVD
Keyword(2) CdZnTe
Keyword(3) CdSeTe
Keyword(4) excimer laser
1st Author's Name A Nakamura
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name D Noda
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name T Aoki
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Y Hatanaka
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2000/5/12
Paper # ED2000-34, CPM2000-19, SDM2000-34
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue