Presentation 2000/5/12
Industry growth process of nitrogen at oxynitridation, and effect to the composition of film
Akira Kawasaki, Masayuki Suzuki, Yoji Saito,
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Abstract(in English) Although silicon oxynitride films have drawn attention as high-quality gate dielectrics, their growth process is not clear. In this work, we tried direct oxynitridation of silicon by excited oxygen gaseous afterward nitridation of silicon by excited nitrogen gaseous, and to investigate the existing structures of nitrogen by angle resoleved x-ray photoelectron spectroscopy. Bonding structures of nitrogen and silicon become N-Si_3 bonding becomes to dominate the surface structure at 700℃, but N-Si_2 and N-Si bonding structures which are not stable become to increase at 800℃.But silicon nitride films becones to firm because Si-N bonding hands exist that nitrogen concentration don't decrease.
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Keyword(in English) oxynitride film / excited nitrogen / excited oxygen / angle resolved x-ray photoelectron spectroscopy
Paper # ED2000-37, CPM2000-22, SDM2000-37
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Committee CPM
Conference Date 2000/5/12(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Industry growth process of nitrogen at oxynitridation, and effect to the composition of film
Sub Title (in English)
Keyword(1) oxynitride film
Keyword(2) excited nitrogen
Keyword(3) excited oxygen
Keyword(4) angle resolved x-ray photoelectron spectroscopy
1st Author's Name Akira Kawasaki
1st Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University()
2nd Author's Name Masayuki Suzuki
2nd Author's Affiliation Department of Electric Emgineering and Ekectronics, Faculty of Engineering, Seikei University
3rd Author's Name Yoji Saito
3rd Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
Date 2000/5/12
Paper # ED2000-37, CPM2000-22, SDM2000-37
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue