Presentation 2000/5/12
Etching of silicon related materials using trifluoro-athetyl-fluoride gas
Yoji Saito, Hirofumi Yamazaki, Isamu Mouri,
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Abstract(in English) We propose reactive gases, which can be easily decomposed, as the etching gas to avoid"greenhouse effects". In this report, the etching reaction between silicon and the trifluoro-athetyl-fluoride(CF_3COF)gas is demonstrated, using remote-plasma at room temperature. The etching reaction is significantly enhanced by the addition of oxygen and the remote-plasma-excitation. The etch rate of silicon and oxide by CF_3COF / O_2 is larger than that by CF_4 / O_2 and C_2F_6 / O_2 at the same O_2 content. According to the optical emission study, however, the density of excited fluorine decreases in the plasma by the added oxygen into the CF_3COF system. Photoelectron studies indicate that the major role of the additional oxygen is to remove the deposited fluorocarbon films from the surfaces.
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Keyword(in English) greenhouse effect / trifluoro athetyl fluoride / sillcon / dry etching / remote plasma
Paper # ED2000-35, CPM2000-20, SDM2000-35
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Conference Information
Committee CPM
Conference Date 2000/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Etching of silicon related materials using trifluoro-athetyl-fluoride gas
Sub Title (in English)
Keyword(1) greenhouse effect
Keyword(2) trifluoro athetyl fluoride
Keyword(3) sillcon
Keyword(4) dry etching
Keyword(5) remote plasma
1st Author's Name Yoji Saito
1st Author's Affiliation Department of Electrical Engineering and Electronics, Seikei University()
2nd Author's Name Hirofumi Yamazaki
2nd Author's Affiliation Department of Electrical Engineering and Electronics, Seikei University
3rd Author's Name Isamu Mouri
3rd Author's Affiliation Department of Electrical Engineering and Electronics, Seikei University
Date 2000/5/12
Paper # ED2000-35, CPM2000-20, SDM2000-35
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue