Presentation | 2000/5/12 Etching of silicon related materials using trifluoro-athetyl-fluoride gas Yoji Saito, Hirofumi Yamazaki, Isamu Mouri, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We propose reactive gases, which can be easily decomposed, as the etching gas to avoid"greenhouse effects". In this report, the etching reaction between silicon and the trifluoro-athetyl-fluoride(CF_3COF)gas is demonstrated, using remote-plasma at room temperature. The etching reaction is significantly enhanced by the addition of oxygen and the remote-plasma-excitation. The etch rate of silicon and oxide by CF_3COF / O_2 is larger than that by CF_4 / O_2 and C_2F_6 / O_2 at the same O_2 content. According to the optical emission study, however, the density of excited fluorine decreases in the plasma by the added oxygen into the CF_3COF system. Photoelectron studies indicate that the major role of the additional oxygen is to remove the deposited fluorocarbon films from the surfaces. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | greenhouse effect / trifluoro athetyl fluoride / sillcon / dry etching / remote plasma |
Paper # | ED2000-35, CPM2000-20, SDM2000-35 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2000/5/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Etching of silicon related materials using trifluoro-athetyl-fluoride gas |
Sub Title (in English) | |
Keyword(1) | greenhouse effect |
Keyword(2) | trifluoro athetyl fluoride |
Keyword(3) | sillcon |
Keyword(4) | dry etching |
Keyword(5) | remote plasma |
1st Author's Name | Yoji Saito |
1st Author's Affiliation | Department of Electrical Engineering and Electronics, Seikei University() |
2nd Author's Name | Hirofumi Yamazaki |
2nd Author's Affiliation | Department of Electrical Engineering and Electronics, Seikei University |
3rd Author's Name | Isamu Mouri |
3rd Author's Affiliation | Department of Electrical Engineering and Electronics, Seikei University |
Date | 2000/5/12 |
Paper # | ED2000-35, CPM2000-20, SDM2000-35 |
Volume (vol) | vol.100 |
Number (no) | 60 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |