Presentation | 2000/5/12 Conductivity type control of ZnO Nattawuth Buthrath, Singh Aran Vir, Yoshihito Hiroe, Akihiro Wakahara, Akira Yoshida, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this research, we deposited ZnO thin films by sputtor method using ZnO target doped with N and Ga. In this experiment area ratio of ZnO target and GaN pieces was 9:1. We obtained p-type Zinc Oxide thin film. Resistivity, carrier concentration and mobility were 37.6[Ωcm], 9×10^<15>[cm^<-3>]and 18.5[cm^2 / V・s], respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Transparent conducting ZnO / Sputter |
Paper # | ED2000-30, CPM2000-15, SDM2000-30 |
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Committee | CPM |
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Conference Date | 2000/5/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Conductivity type control of ZnO |
Sub Title (in English) | |
Keyword(1) | Transparent conducting ZnO |
Keyword(2) | Sputter |
1st Author's Name | Nattawuth Buthrath |
1st Author's Affiliation | Toyohashi University of Technology() |
2nd Author's Name | Singh Aran Vir |
2nd Author's Affiliation | Toyohashi University of Technology |
3rd Author's Name | Yoshihito Hiroe |
3rd Author's Affiliation | Toyohashi University of Technology |
4th Author's Name | Akihiro Wakahara |
4th Author's Affiliation | Toyohashi University of Technology |
5th Author's Name | Akira Yoshida |
5th Author's Affiliation | Toyohashi University of Technology |
Date | 2000/5/12 |
Paper # | ED2000-30, CPM2000-15, SDM2000-30 |
Volume (vol) | vol.100 |
Number (no) | 60 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |