| Presentation | 2000/5/12 Growth characteristics of CdS layers on(100)GaAs by metalorganic vapor phase epitaxy H.B.Samion H, Yasumitsu Tomita, Yusuke Masuda, Kazuhito Yasuda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Growth characteristics of CdS layers on(100)GaAs have been studied in MOVPE using dimethylcadmium(DMCd)and hydrogen sulphide(H_2S)as precursors. Grown layers showed cubic phase for growth temperature between 250 and 350℃ and mixed phase of cubic and hexagonal above 350℃. High quality cubic CdS layers were obtained by two-step growth procedure, where is the single crystal cubic CdS layers were grown at 300℃ as buffer layers, and second layers were grown on them at 450℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOVPE / growth characteristics / DMCd / H_2S / cubic CdS |
| Paper # | ED2000-33, CPM2000-18, SDM2000-33 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2000/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth characteristics of CdS layers on(100)GaAs by metalorganic vapor phase epitaxy |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | growth characteristics |
| Keyword(3) | DMCd |
| Keyword(4) | H_2S |
| Keyword(5) | cubic CdS |
| 1st Author's Name | H.B.Samion H |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology() |
| 2nd Author's Name | Yasumitsu Tomita |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| 3rd Author's Name | Yusuke Masuda |
| 3rd Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| 4th Author's Name | Kazuhito Yasuda |
| 4th Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| Date | 2000/5/12 |
| Paper # | ED2000-33, CPM2000-18, SDM2000-33 |
| Volume (vol) | vol.100 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |