Presentation 2000/5/12
Photoluminescence spectroscopy of resonant tunneling through InAs self-assembled quantum dots
Tutaka Ohno, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani,
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Abstract(in English) The resonant tunneling through single InAs quantum dots embedded in an n-GaAs / i-Al_<0.38>Ga_<0.62>As / n-GaAs diode has been studied by using microscopic photoluminescence spectroscopy. Many sharp luminescence lines which originated from single quantum dots were observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line was investigated. The peak intensity showed triangular dependence which was similar to the current-voltage characteristics of electron resonant tunneling in 3D-0D structure. When the bias voltage was increased, the peak energy slightly shifted to a lower energy indicating the existence of Stark effect, and the linewidth slightly increased. The higher the luminescence energy was, the broader the linewidth was. This result agrees with the calculated resonant level width. The lifetime of resonant states was estimated to be 2.4-27 ps for luminescence linewidth of 250-22 μeV.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InAs / quantum dot / resonant tunneling / photoluminescence
Paper # ED2000-40, CPM2000-25, SDM2000-40
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Conference Information
Committee CPM
Conference Date 2000/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Photoluminescence spectroscopy of resonant tunneling through InAs self-assembled quantum dots
Sub Title (in English)
Keyword(1) InAs
Keyword(2) quantum dot
Keyword(3) resonant tunneling
Keyword(4) photoluminescence
1st Author's Name Tutaka Ohno
1st Author's Affiliation Dept.of Quantum Engineering, Nagoya University()
2nd Author's Name Shigeru Kishimoto
2nd Author's Affiliation Dept.of Quabtum Engineering, Nagoya University
3rd Author's Name Koichi Maezawa
3rd Author's Affiliation Dept.of Quantum Engineering, Nagoya University
4th Author's Name Takashi Mizutani
4th Author's Affiliation Dept.of Quantum Engineering, Nagoya University
Date 2000/5/12
Paper # ED2000-40, CPM2000-25, SDM2000-40
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue