Presentation 2000/5/12
Growth of CuGaS_2 with buried SiO_2 structure by Epitaxial lateral overgrowth
Akimitsu Ikeda, masanori Hibi, Hideto Miyake, Kazumasa Hiramatsu,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Selective area growth(SAG)of CuGaS_2 using SiO_2 mask by open-tube iodine transport method was studied for reducing dislocation density and improving crystalline quality. Selectivity of SAG using a dot patte depended on iodine concentration. The grown crystal had{112}and{011}facets which are observed in CVT-grown CuGaS_2. Optimizing conditioms of iodine concentration and mask pattern direction, buried SiO_2 structure was obtained by epitaxial lateral overgrowth(ELO)using a stripe pattern. FWHM of x-ray rocking curve was nearly same as that of a CVT grown substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Open-tube iodine transport method / CuGaS_2 / Selective area growth / Epitaxial lateral over growth
Paper # ED2000-32, CPM2000-17, SDM2000-32
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Conference Information
Committee CPM
Conference Date 2000/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of CuGaS_2 with buried SiO_2 structure by Epitaxial lateral overgrowth
Sub Title (in English)
Keyword(1) Open-tube iodine transport method
Keyword(2) CuGaS_2
Keyword(3) Selective area growth
Keyword(4) Epitaxial lateral over growth
1st Author's Name Akimitsu Ikeda
1st Author's Affiliation Department of Electrical and Electronic Engineering, Mie University()
2nd Author's Name masanori Hibi
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Mie University
3rd Author's Name Hideto Miyake
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Mie University
4th Author's Name Kazumasa Hiramatsu
4th Author's Affiliation Department of Electrical and Electronic Engineering, Mie University
Date 2000/5/12
Paper # ED2000-32, CPM2000-17, SDM2000-32
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue