| Presentation | 2000/5/12 Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment(2) Koichi Tokuda, Tatsuya Ibe, Yoji Saito, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In p-chanel MOSFETs, Boron dopant penetration through the thin gate oxide changes threshold voltage. Surface nitridation of silicon oxide is will be effective to suppress the boron penetration. In this paper, we tried surface nitridation of silicon oxide by the exposure to fluorine and to remote-plasma-excited nitrogen. we investigated depth profile of nitrogen and fluorine in the nitrided oxide by angle resolved x-ray photoelectron spectroscopy. Moreover, we fabricated MOS capacitors with the nitrided oxide and measured high-frequency C-V characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | oxide / surface nitridation / fluorine / x-ray photoelectron spectroscopy |
| Paper # | ED2000-36, CPM2000-21, SDM2000-36 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2000/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment(2) |
| Sub Title (in English) | |
| Keyword(1) | oxide |
| Keyword(2) | surface nitridation |
| Keyword(3) | fluorine |
| Keyword(4) | x-ray photoelectron spectroscopy |
| 1st Author's Name | Koichi Tokuda |
| 1st Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University() |
| 2nd Author's Name | Tatsuya Ibe |
| 2nd Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikie University |
| 3rd Author's Name | Yoji Saito |
| 3rd Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikie University |
| Date | 2000/5/12 |
| Paper # | ED2000-36, CPM2000-21, SDM2000-36 |
| Volume (vol) | vol.100 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |