Presentation 2000/5/12
Growth of InGaAs layer on GaAs off substrates by metal organic chemical vapor deposition
M Masuda, K Kuwahara, S Fuke, Y Takano,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have investigated InGaAs layers grown on GaAs(100)just substrates and on GaAs(100)substrates misoriented 2゜toward[001]using graded buffer layers by metal organic chemical vapor deposition. The crosshatch pattem was observed for In_<0.15>Ga_<0.85>As and In_<0.2>Ga_<0.8>As layers, and step flow growth was confirmed for the layers on misoriented substrates by atomic force microscopy. The employment of misoriented substrates decreased the FWHM of the x-ray rocking curve of the InGaAs layer and increased the radius of curvature of the sample. But no effect of substrate misorientation on and the radius of curvature of the In_<0.38>Ga_<0.62>As and In_<0.51>Ga_<0.49>As was observed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaAs / MOCVD / graded buffer / misoriented substrate / FWHM / radius of curvature
Paper # ED2000-41, CPM2000-26, SDM2000-41
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Conference Information
Committee CPM
Conference Date 2000/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of InGaAs layer on GaAs off substrates by metal organic chemical vapor deposition
Sub Title (in English)
Keyword(1) InGaAs
Keyword(2) MOCVD
Keyword(3) graded buffer
Keyword(4) misoriented substrate
Keyword(5) FWHM
Keyword(6) radius of curvature
1st Author's Name M Masuda
1st Author's Affiliation Department of Electronics, Faculty of Engineering, Shizuoka University()
2nd Author's Name K Kuwahara
2nd Author's Affiliation Department of Electronics, Faculty of Engineering, Shizuoka University
3rd Author's Name S Fuke
3rd Author's Affiliation Department of Electronics, Faculty of Elgineering, Shizuoka University
4th Author's Name Y Takano
4th Author's Affiliation Department of Electronics, Faculty of Engineering, Shizuoka University
Date 2000/5/12
Paper # ED2000-41, CPM2000-26, SDM2000-41
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 5
Date of Issue