Presentation 2000/5/12
Study on the LPE growth of InGaAs pyramidal layers on(100)GaAs substrates
K Balakrishnan, S Iida, T Koyama, M Kumagawa, Y Hayakawa,
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Abstract(in English) Growth of In_xGa_<1-x>As(x=0.06)layers on various types of patterned(100)GaAs substrates by liquid phase epitaxy(LPE)has been investigated. Non-planar InGaAs layer having filled tent-like structure was grown on non-patterned substrate. When the InGaAs was grown on circular patterned substrate, a non-hollow pyramid structure was obtained. Perfect hollow pyramid structured InGaAs was found to be grown on trench-substrates of(100)GaAs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) LPE / InGaAs / (100)GaAs substrate / pyramid stucture
Paper # ED2000-43, CPM2000-28, SDM2000-43
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Committee CPM
Conference Date 2000/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on the LPE growth of InGaAs pyramidal layers on(100)GaAs substrates
Sub Title (in English)
Keyword(1) LPE
Keyword(2) InGaAs
Keyword(3) (100)GaAs substrate
Keyword(4) pyramid stucture
1st Author's Name K Balakrishnan
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name S Iida
2nd Author's Affiliation Research Institute of Electronics, Shizuoka university
3rd Author's Name T Koyama
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name M Kumagawa
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Y Hayakawa
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2000/5/12
Paper # ED2000-43, CPM2000-28, SDM2000-43
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue