| Presentation | 2000/5/12 Growth of InGaSb under Reduced Gravity using an Airplane and 1G conditions T Nakamura, Y Hayakawa, K Balakrishnan, N Shibata, H Komatsu, N Murakami, T Yamada, D Krishnamurthy, T Koyama, M Miyazawa, M Kumagawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recrystallization studies were done at areduced gravity level of 1^<-2>G- for 20 seconds using an airplane and at normal gravity conditions on earth.After the heating and cooling processes, samples were analyzed by EPMA.The obtained results are:(1)there were large needle crystals in the 10^<-2>G-processed sample;(2)there were many small needle crystals in the 1G-processed sample, because the convection under 10^<-2> condition is different from that under 1G condition. These results show that it is possible to grow large InGaSb single crystals under the reduced gravity condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Airplane / Microgravity / InGaSb / Growth / Needle crystal |
| Paper # | ED2000-42, CPM2000-27, SDM2000-42 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2000/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of InGaSb under Reduced Gravity using an Airplane and 1G conditions |
| Sub Title (in English) | |
| Keyword(1) | Airplane |
| Keyword(2) | Microgravity |
| Keyword(3) | InGaSb |
| Keyword(4) | Growth |
| Keyword(5) | Needle crystal |
| 1st Author's Name | T Nakamura |
| 1st Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Y Hayakawa |
| 2nd Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | K Balakrishnan |
| 3rd Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | N Shibata |
| 4th Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | H Komatsu |
| 5th Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | N Murakami |
| 6th Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 7th Author's Name | T Yamada |
| 7th Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 8th Author's Name | D Krishnamurthy |
| 8th Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 9th Author's Name | T Koyama |
| 9th Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| 10th Author's Name | M Miyazawa |
| 10th Author's Affiliation | Shizuoka Univ.Faculty of Eng.Research Institute of Electrinics, Shizuoka University |
| 11th Author's Name | M Kumagawa |
| 11th Author's Affiliation | R.I.E., Shizuoka Univ., Research Institute of Electronics, Shizuoka University |
| Date | 2000/5/12 |
| Paper # | ED2000-42, CPM2000-27, SDM2000-42 |
| Volume (vol) | vol.100 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |