Presentation 2000/5/12
SiC thin films deposition by plasma CVD
H Nonaka, T Muramatsu, Y Xu, H Anma, T Aoki, Y Hatanaka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The plastic material is used for various purposes. However, it deteriorates by ultravioet ray, and is weak for mechanical strength. Therefore, Characteristics of the protection of the plastic surface have been investigated by coating SiC thin film on the plastic. Films were deposited cathode plasma CVD method using hexamethyledisilane(HMDS, Si_2(CH_3)_6). SiC films were developed high quality by using the stainless mesh. Resistant of the plastic for UV light was increased by coating the SiC film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Plasma CVD / Hexamethyldislane / SiC film / Stainless meth
Paper # ED2000-38, CPM2000-23, SDM2000-38
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Conference Information
Committee CPM
Conference Date 2000/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) SiC thin films deposition by plasma CVD
Sub Title (in English)
Keyword(1) Plasma CVD
Keyword(2) Hexamethyldislane
Keyword(3) SiC film
Keyword(4) Stainless meth
1st Author's Name H Nonaka
1st Author's Affiliation Research Institute of Electronics()
2nd Author's Name T Muramatsu
2nd Author's Affiliation Research Institute of Electronics
3rd Author's Name Y Xu
3rd Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University
4th Author's Name H Anma
4th Author's Affiliation KOITO Manufacturing co., ltd.
5th Author's Name T Aoki
5th Author's Affiliation Research Institute of Electronics
6th Author's Name Y Hatanaka
6th Author's Affiliation Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka University
Date 2000/5/12
Paper # ED2000-38, CPM2000-23, SDM2000-38
Volume (vol) vol.100
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue