Electronics-Silicon Devices and Materials(Date:1998/12/10)

Presentation
表紙

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[Date]1998/12/10
[Paper #]
目次

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[Date]1998/12/10
[Paper #]
Photoreflectance Analysis of Si(111)with Different Flatness

Masashi AGATA,  Hideo WADA,  Koji ERIGUCHI,  Akira FUJIMOTO,  Takeshi KANASHIMA,  Masanori OKUYAMA,  

[Date]1998/12/10
[Paper #]SDM98-167
Control of surface recombination of Si wafers by electric field in the μ-PCD

Masashi Hirano,  Naoki Kato,  Masaya Ichimura,  Eisuke Arai,  Hiroyuki Takamatsu,  Shingo Sumie,  

[Date]1998/12/10
[Paper #]SDM98-168
Determination of Donor Densities and Energy Levels in SiC by a New Graphical Method Based on the Temperature Dependence of Majority-Carrier Concentration

Hideharu Matsuura,  Tunenobu Kimoto,  Hiroyuki Matsunami,  

[Date]1998/12/10
[Paper #]SDM98-169
Temperature dependence of excess carrier lifetime in bonded SOI

Masashi Hirano,  Koji Yamauchi,  Masaya Ichimura,  Eisuke Arai,  

[Date]1998/12/10
[Paper #]SDM98-170
Characterization of crystaline silicon grown by PECVD for thin film solar cell

K Kurobe,  T Fuyuki,  H Matsunami,  

[Date]1998/12/10
[Paper #]SDM98-171
VT-STM observation of Si surfaces damaged by ion impact

Toshio Seki,  Jiro Matsuo,  Isao Yamada,  

[Date]1998/12/10
[Paper #]SDM98-172
AFM Observation and Molecular Orbital Analysis of Initial Oxidation in Air on H-terminated Si(111)Surface

Norio OKADA,  Shinji YUDATE,  Takeshi KANASHIMA,  Masanori OKUYAMA,  Katsunobu NISHIHARA,  

[Date]1998/12/10
[Paper #]SDM98-173
Analysis of Direct Tunneling of Thin SiO_2 Film

N MIURA,  N MATSUO,  J YAMAUCHI,  Y KITAGAWA,  T MIYOSHI,  

[Date]1998/12/10
[Paper #]SDM98-174
Formation of Ultra-thin SiO_2 at Low Temperature by ECR Remote Plasma System

K Moriizumi,  Y Ueda,  T Fuyuki,  H Matsunami,  

[Date]1998/12/10
[Paper #]SDM98-175
A Study of Charge Build-up Behavior on Ion Implanted

Masahiko Niwayama,  Hiroko Kubo,  Kenji Yoneda,  

[Date]1998/12/10
[Paper #]SDM98-176
The Influence of Rapid Thermal Annealing on the Minority Carrier Lifetime

Hiroko Kubo,  Atsushi Ishinaga,  Kenji Yoneda,  

[Date]1998/12/10
[Paper #]SDM98-177
Single electron tunneling of SiO_2 films containing Si nanocrystals

A Tanaka,  T Inoue,  M Fujii,  S Hayashi,  K Yamamoto,  

[Date]1998/12/10
[Paper #]SDM98-178
Plasma CVD of Low-Dielectric Constant Insulator Films Using Fluorocarbon Gas with HMDSO

Tatsuru SHIRAFUJI,  Yasuo MIYAZAKI,  Yasuaki HAYASHI,  Shigehiro NISHINO,  

[Date]1998/12/10
[Paper #]SDM98-179
Determination of Trap Densities and Energy Levels in a Thin BST Film on Si by Discharge Current Transient Spectroscopy

Takashi Hase,  Hideharu Matsuura,  

[Date]1998/12/10
[Paper #]SDM98-180
Boron Distribution in Silicon Depending on Hydrogen Dose on (B_2H_6+H_2)Ion Implantation

Katsuhiro Yokota,  Hidetoshi Nishimura,  Kouchirou Terada,  Kazuhiro Nakamura,  Sigeki Sakai,  Masayasu Tanjou,  Hiromiti Takano,  Masao Kumagaya,  

[Date]1998/12/10
[Paper #]SDM98-181
Damage formation and enhanced diffusion by decaborane ion implantation

T. Kusaba,  T. Seki,  T. Aoki,  J. Matsuo,  M. Kase,  K. Goto,  T. Sugii,  I. Yamada,  

[Date]1998/12/10
[Paper #]SDM98-182
Magnetoresistance Effect of Four Terminal MOSFET Induced by Lateral Magnetic Field

Nobuyuki MIZUKAWA,  Koji MATSUNAGA,  Sadayoshi HIRAI,  Tadashi OHACHI,  Ichiro TANIGUCHI,  

[Date]1998/12/10
[Paper #]SDM98-183
[OTHERS]

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[Date]1998/12/10
[Paper #]