| Presentation | 1998/12/10 Photoreflectance Analysis of Si(111)with Different Flatness Masashi AGATA, Hideo WADA, Koji ERIGUCHI, Akira FUJIMOTO, Takeshi KANASHIMA, Masanori OKUYAMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Si wafers with different flatness has been characterized by photoreflectance(PR)spectroscopy which is optical, contactless and nondestructive method. Si surface has been atomically flattened by NH_4F treatment. The PR signal intensity of the sample with flat treatment is larger than that without flat treatment. This is because the surface field modulation becomes large in the flat surface due to decrease of the density of interface levels as recombination center. This result agrees well with characteristics of high-frequency capacitance and life time of minority carrier. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Photoreflectance / Flat treatment Density of interface levels / Life time |
| Paper # | SDM98-167 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photoreflectance Analysis of Si(111)with Different Flatness |
| Sub Title (in English) | |
| Keyword(1) | Photoreflectance |
| Keyword(2) | Flat treatment Density of interface levels |
| Keyword(3) | Life time |
| 1st Author's Name | Masashi AGATA |
| 1st Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka Univeristy() |
| 2nd Author's Name | Hideo WADA |
| 2nd Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka Univeristy |
| 3rd Author's Name | Koji ERIGUCHI |
| 3rd Author's Affiliation | Central Research Lab, Matsusita Electric Ind. Co., Ltd. |
| 4th Author's Name | Akira FUJIMOTO |
| 4th Author's Affiliation | Department of Electrical Engineering, Wakayama National College of Technology |
| 5th Author's Name | Takeshi KANASHIMA |
| 5th Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka Univeristy |
| 6th Author's Name | Masanori OKUYAMA |
| 6th Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka Univeristy |
| Date | 1998/12/10 |
| Paper # | SDM98-167 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |