| Presentation | 1998/12/10 VT-STM observation of Si surfaces damaged by ion impact Toshio Seki, Jiro Matsuo, Isao Yamada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Variable Temperature Scanning Tunneling Microscope(VT-STM)allows us to study annealing process of the damage caused by ion impact. A Si(111)surface irradiated by Xe ion, with Va=1kV and Dose-6.4×10^12 ions/cm^2, was observed by VT-STM. The disordered image was obtained at room temperature after irradiation. Many redeposited Si atoms and several vacancy clusters were found on the surface. When it was observed by VT-STM at 600℃, some fragments of the 7×7 structure and vacancy clusters remained on the surface. At this temperature, only atoms on bondary between vacancy cluster and 7×7 structure could move, but the large vacancy clusters didn't move. These indicate that redeposited Si atoms move fast , but vacancies move very slow on surfaces at 600℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | STM / Si / Ion irradiation / defect on surface / cluster / annealing process / vacancy |
| Paper # | SDM98-172 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | VT-STM observation of Si surfaces damaged by ion impact |
| Sub Title (in English) | |
| Keyword(1) | STM |
| Keyword(2) | Si |
| Keyword(3) | Ion irradiation |
| Keyword(4) | defect on surface |
| Keyword(5) | cluster |
| Keyword(6) | annealing process |
| Keyword(7) | vacancy |
| 1st Author's Name | Toshio Seki |
| 1st Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Kyoto University() |
| 2nd Author's Name | Jiro Matsuo |
| 2nd Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Kyoto University |
| 3rd Author's Name | Isao Yamada |
| 3rd Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Kyoto University |
| Date | 1998/12/10 |
| Paper # | SDM98-172 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |