Presentation | 1998/12/10 Control of surface recombination of Si wafers by electric field in the μ-PCD Masashi Hirano, Naoki Kato, Masaya Ichimura, Eisuke Arai, Hiroyuki Takamatsu, Shingo Sumie, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A negative or positive voltage up to 2kV was applied to a MIS structure consisting of a transparent electrode, a spacer and a Si wafer. The wafer was irradiated with a pulsed laser through the electrode, and the decay of the excess carriers was monitored by the microwave reflectance photoconductivity decay(μ-PCD)method. The carrier lifetime of P- and n-type as-polished wafers was increased by a factor of 3 by application of 2kV negative voltage to the electrode. This showed that the surface recombination velocity was controlled by the external electric field. Different tendency was observed for the oxidized wafers, and these results were explained considering the surface charge and the surface state. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | μ-PCD / lifetime / surface recombination / surface band |
Paper # | SDM98-168 |
Date of Issue |
Conference Information | |
Committee | SDM |
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Conference Date | 1998/12/10(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Control of surface recombination of Si wafers by electric field in the μ-PCD |
Sub Title (in English) | |
Keyword(1) | μ-PCD |
Keyword(2) | lifetime |
Keyword(3) | surface recombination |
Keyword(4) | surface band |
1st Author's Name | Masashi Hirano |
1st Author's Affiliation | Dept. of Electrical and Computer Engineering Nagoya Institute of Technology() |
2nd Author's Name | Naoki Kato |
2nd Author's Affiliation | Dept. of Electrical and Computer Engineering Nagoya Institute of Technology |
3rd Author's Name | Masaya Ichimura |
3rd Author's Affiliation | Center for Cooperative Research |
4th Author's Name | Eisuke Arai |
4th Author's Affiliation | Dept. of Electrical and Computer Engineering Nagoya Institute of Technology |
5th Author's Name | Hiroyuki Takamatsu |
5th Author's Affiliation | Process Technology Research Laboratory, Kobe SteeI, LTD. |
6th Author's Name | Shingo Sumie |
6th Author's Affiliation | Process Technology Research Laboratory, Kobe SteeI, LTD. |
Date | 1998/12/10 |
Paper # | SDM98-168 |
Volume (vol) | vol.98 |
Number (no) | 445 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |