| Presentation | 1998/12/10 Damage formation and enhanced diffusion by decaborane ion implantation T. Kusaba, T. Seki, T. Aoki, J. Matsuo, M. Kase, K. Goto, T. Sugii, I. Yamada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is discussed that damage formation and enhanced diffusion by decaborane ion implantation. In the case of 900℃ annealing, TED was suppressed as the implant energy decreased. During annealing at 900°, 950℃ and 1000℃, the diffusion of boron atoms did not depend on implant dose at the dose of 1×10^14-10^15 atoms/cm^2. This is because an amorphous layer is already formed near the surface at these range in the case of decaborane ion implantation at 3keV. The efficiency of ion implantation is 65% in the case of ultra low energy decaborane ion implantation at 200eV/atom. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | decaborane(B_10H_14) / shallow junction / ion implantation / cluster / transient enhanced diffusion(TED) |
| Paper # | SDM98-182 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Damage formation and enhanced diffusion by decaborane ion implantation |
| Sub Title (in English) | |
| Keyword(1) | decaborane(B_10H_14) |
| Keyword(2) | shallow junction |
| Keyword(3) | ion implantation |
| Keyword(4) | cluster |
| Keyword(5) | transient enhanced diffusion(TED) |
| 1st Author's Name | T. Kusaba |
| 1st Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Faculty of Engineering, Kyoto University() |
| 2nd Author's Name | T. Seki |
| 2nd Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Faculty of Engineering, Kyoto University |
| 3rd Author's Name | T. Aoki |
| 3rd Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Faculty of Engineering, Kyoto University |
| 4th Author's Name | J. Matsuo |
| 4th Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Faculty of Engineering, Kyoto University |
| 5th Author's Name | M. Kase |
| 5th Author's Affiliation | ULSI Development Division, Fujitsu Ltd. |
| 6th Author's Name | K. Goto |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | T. Sugii |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 8th Author's Name | I. Yamada |
| 8th Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Faculty of Engineering, Kyoto University |
| Date | 1998/12/10 |
| Paper # | SDM98-182 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |