| Presentation | 1998/12/10 Characterization of crystaline silicon grown by PECVD for thin film solar cell K Kurobe, T Fuyuki, H Matsunami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon epitaxial growth has been studied by using the plasma-enhanced chemical vapor deposition(PECVD)method with SiH_2Cl_2, H_2 and Ar gases at temperatures between 900and 1050℃. The growth rate increased with RF power(<50W)and only the emission spectra of SiCl_2 and Ar are observed. The electrical properties of undoped epitaxial layers are investigated and little difference is found between the grown layers with and without plasma in Hall mobility. The diffusion length of p-doped layer with plasma measured about 20μm and that leads the possibility for thin filmsolar cell. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thin film / solar cell / crystaline silicon / PECVD / SiH_2Cl_2 / optical emission spectroscopy |
| Paper # | SDM98-171 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of crystaline silicon grown by PECVD for thin film solar cell |
| Sub Title (in English) | |
| Keyword(1) | thin film |
| Keyword(2) | solar cell |
| Keyword(3) | crystaline silicon |
| Keyword(4) | PECVD |
| Keyword(5) | SiH_2Cl_2 |
| Keyword(6) | optical emission spectroscopy |
| 1st Author's Name | K Kurobe |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | T Fuyuki |
| 2nd Author's Affiliation | Nara Institute of Science and Technology |
| 3rd Author's Name | H Matsunami |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 1998/12/10 |
| Paper # | SDM98-171 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |