Presentation 1998/12/10
Analysis of Direct Tunneling of Thin SiO_2 Film
N MIURA, N MATSUO, J YAMAUCHI, Y KITAGAWA, T MIYOSHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The direct tunneling(DT) conduction in the low voltage range for the thermal SiO_2 with a thickness of 2.7~3.3mm formed on p-Si(100) substrate is examined considering the reverse DT current which flows from the low potential electrode to the high potential electrode. The phenomenon that the decrease ratio of the DT current in the range of 0~0.5V increases was clarified. However, there is still a difference of the DT current of one order at maximum between the measured and the calculated data. Consideration of Si multi-folded valleys reproduces the measured DT current in the low voltage range.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) thin SiO_2 film / direct tunneling / the low voltage / reverse DT current / Si multi-folded valleys
Paper # SDM98-174
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Conference Information
Committee SDM
Conference Date 1998/12/10(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Direct Tunneling of Thin SiO_2 Film
Sub Title (in English)
Keyword(1) thin SiO_2 film
Keyword(2) direct tunneling
Keyword(3) the low voltage
Keyword(4) reverse DT current
Keyword(5) Si multi-folded valleys
1st Author's Name N MIURA
1st Author's Affiliation Department of Electrical & Electronic Engineering, Yamaguchi University()
2nd Author's Name N MATSUO
2nd Author's Affiliation Department of Electrical & Electronic Engineering, Yamaguchi University
3rd Author's Name J YAMAUCHI
3rd Author's Affiliation Department of Electrical & Electronic Engineering, Yamaguchi University
4th Author's Name Y KITAGAWA
4th Author's Affiliation Department of Electrical & Electronic Engineering, Yamaguchi University
5th Author's Name T MIYOSHI
5th Author's Affiliation Department of Electrical & Electronic Engineering, Yamaguchi University
Date 1998/12/10
Paper # SDM98-174
Volume (vol) vol.98
Number (no) 445
Page pp.pp.-
#Pages 7
Date of Issue