| Presentation | 1998/12/10 Determination of Donor Densities and Energy Levels in SiC by a New Graphical Method Based on the Temperature Dependence of Majority-Carrier Concentration Hideharu Matsuura, Tunenobu Kimoto, Hiroyuki Matsunami, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We proposed and discuss a new method for determining the densities and energy levels of dopants and traps in a semiconductor by the temperature dependence n(T) of majority-carrier concentration. Using n(T) N-doped n-type 4HSiC measured by means of Hall-effect measurement, we determine the densities and energy levels of donors by the method proposed here. Two types of donors due to N atoms were confirmed, and the obtained values of the densities and energy levels were found to be reliable. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | dopant / trap / evaluation method / temperature dependence of majority-carrier concentration / 4HSiC / Hall-effect measurement |
| Paper # | SDM98-169 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Determination of Donor Densities and Energy Levels in SiC by a New Graphical Method Based on the Temperature Dependence of Majority-Carrier Concentration |
| Sub Title (in English) | |
| Keyword(1) | dopant |
| Keyword(2) | trap |
| Keyword(3) | evaluation method |
| Keyword(4) | temperature dependence of majority-carrier concentration |
| Keyword(5) | 4HSiC |
| Keyword(6) | Hall-effect measurement |
| 1st Author's Name | Hideharu Matsuura |
| 1st Author's Affiliation | Department of Electronics, Osaka Electro-Communication University() |
| 2nd Author's Name | Tunenobu Kimoto |
| 2nd Author's Affiliation | Department of Electronics Science and Engineering, Kyoto University |
| 3rd Author's Name | Hiroyuki Matsunami |
| 3rd Author's Affiliation | Department of Electronics Science and Engineering, Kyoto University |
| Date | 1998/12/10 |
| Paper # | SDM98-169 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |