| Presentation | 1998/12/10 AFM Observation and Molecular Orbital Analysis of Initial Oxidation in Air on H-terminated Si(111)Surface Norio OKADA, Shinji YUDATE, Takeshi KANASHIMA, Masanori OKUYAMA, Katsunobu NISHIHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Si(111) flattened by NH_4F treatment has been exposed in air, and the surface has been observed by Atomic Force Microscopy(AFM). Atomic bondings have been theoretically analyzed by Molecular Orbital Method. The AFM observation shows that native oxidation in air is sensitive to H_2O and the reaction of H_2O with Si is different from that of O_2, and Molecular Orbital Analysis supports this behavior. Moreover for the Si exposed for 180 min, tunneling current through the oxide film is measured by I-V measurements with AFM using conductive cantilever and fitted well with theoretical curve analyzed by tunneling through SiO_2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Atomic Force Microscopy(AFM) / Molecular Orbital Method / Native oxidation in air |
| Paper # | SDM98-173 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AFM Observation and Molecular Orbital Analysis of Initial Oxidation in Air on H-terminated Si(111)Surface |
| Sub Title (in English) | |
| Keyword(1) | Atomic Force Microscopy(AFM) |
| Keyword(2) | Molecular Orbital Method |
| Keyword(3) | Native oxidation in air |
| 1st Author's Name | Norio OKADA |
| 1st Author's Affiliation | Area of Materials and Device Physics Department of Physical Science, Graduate School of Engineering Science, Osaka University() |
| 2nd Author's Name | Shinji YUDATE |
| 2nd Author's Affiliation | Institute of Laser Engineering, Osaka University |
| 3rd Author's Name | Takeshi KANASHIMA |
| 3rd Author's Affiliation | Area of Materials and Device Physics Department of Physical Science, Graduate School of Engineering Science, Osaka University |
| 4th Author's Name | Masanori OKUYAMA |
| 4th Author's Affiliation | Area of Materials and Device Physics Department of Physical Science, Graduate Schoolof Engineering Science, Osaka University |
| 5th Author's Name | Katsunobu NISHIHARA |
| 5th Author's Affiliation | Institute of La ser Engineering, Osaka University |
| Date | 1998/12/10 |
| Paper # | SDM98-173 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |