| Presentation | 1998/12/10 Boron Distribution in Silicon Depending on Hydrogen Dose on (B_2H_6+H_2)Ion Implantation Katsuhiro Yokota, Hidetoshi Nishimura, Kouchirou Terada, Kazuhiro Nakamura, Sigeki Sakai, Masayasu Tanjou, Hiromiti Takano, Masao Kumagaya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ion species which were produced using diborane diluted with hydrogen were implanted into silicon using an ion-implantor without mass-filters. The distribution straggle of B atoms produced by dissociation of molecular ions at the silicon surface increased with the dose of hydrogen used for diluting diborane although it was dominated by hydrogen dissociated from diborane ions. During annealing for restoring silicon crystalline lattices distroyed by the ion-implantation, the diffusion of the implanted B atoms into silicon was suppressed depending on the dose of hydrogen. The activation of the B atoms depended strongly on the dose of hydrogen on comparison with the diffusion of the B atoms:the carrier concentration profiles became shallower than the B atom concentration profiles. Much of H atoms were effused fron the silicon into atmosphere during the annealing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon / Boron / Ion-Implantation / Diborane / Hydrogen / Diffusion / Activation |
| Paper # | SDM98-181 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Boron Distribution in Silicon Depending on Hydrogen Dose on (B_2H_6+H_2)Ion Implantation |
| Sub Title (in English) | |
| Keyword(1) | Silicon |
| Keyword(2) | Boron |
| Keyword(3) | Ion-Implantation |
| Keyword(4) | Diborane |
| Keyword(5) | Hydrogen |
| Keyword(6) | Diffusion |
| Keyword(7) | Activation |
| 1st Author's Name | Katsuhiro Yokota |
| 1st Author's Affiliation | High Technology Research Center and Faculty of Engineering, Kansai University() |
| 2nd Author's Name | Hidetoshi Nishimura |
| 2nd Author's Affiliation | Faculty of Engineering, Kansai University |
| 3rd Author's Name | Kouchirou Terada |
| 3rd Author's Affiliation | Faculty of Engineering, Kansai University |
| 4th Author's Name | Kazuhiro Nakamura |
| 4th Author's Affiliation | High Technology Research Centerand Faculty of Engineering, Kansai University |
| 5th Author's Name | Sigeki Sakai |
| 5th Author's Affiliation | Nissinn Electric Co., |
| 6th Author's Name | Masayasu Tanjou |
| 6th Author's Affiliation | Nissinn ElectricCo., |
| 7th Author's Name | Hiromiti Takano |
| 7th Author's Affiliation | Kanagawa High Technology Foundation |
| 8th Author's Name | Masao Kumagaya |
| 8th Author's Affiliation | Kanagawa High Technology Foundation |
| Date | 1998/12/10 |
| Paper # | SDM98-181 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |