| Presentation | 1998/12/10 Determination of Trap Densities and Energy Levels in a Thin BST Film on Si by Discharge Current Transient Spectroscopy Takashi Hase, Hideharu Matsuura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In FET-type nonvolatile memories with MFS(metal-ferroelectric-semiconductor)structure, it is pointed out that data retention time becomes short due to charged carrier injection into the ferroelectric layer. In order to solve this problem, MDFDS(M-dielectric-F-dielectric-S)structure is proposed. In this strucure, two dielectric layers prevent the injection. In order to obtain high resistive BST(Ba_xSr_1-xTiO_3)layers with a high dielectric constant, the relationship between traps and a leakage current in the layer was investigated. The densities and energy levels of traps in BST were determined by DCTS(discharge current transient spectroscopy), and traps with the trap levels of around 1.14 eV were found to affect the leakage current. Moreover, the relationship between DCTS signals and the position of traps in the film was discussed, since it had not been discussed in the previous papers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectric / nonvolatile memory / BST / traps / leakage current / discharge current transient spectroscopy(DCTS) |
| Paper # | SDM98-180 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Determination of Trap Densities and Energy Levels in a Thin BST Film on Si by Discharge Current Transient Spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | ferroelectric |
| Keyword(2) | nonvolatile memory |
| Keyword(3) | BST |
| Keyword(4) | traps |
| Keyword(5) | leakage current |
| Keyword(6) | discharge current transient spectroscopy(DCTS) |
| 1st Author's Name | Takashi Hase |
| 1st Author's Affiliation | Department of Electronics, Osaka Electro-Communication University() |
| 2nd Author's Name | Hideharu Matsuura |
| 2nd Author's Affiliation | Department of Electronics, Osaka Electro-Communication University |
| Date | 1998/12/10 |
| Paper # | SDM98-180 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |