Presentation | 1998/12/10 Plasma CVD of Low-Dielectric Constant Insulator Films Using Fluorocarbon Gas with HMDSO Tatsuru SHIRAFUJI, Yasuo MIYAZAKI, Yasuaki HAYASHI, Shigehiro NISHINO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Amorphous fluorinated carbon (a-C:F)films including Si-O components have been prepared from RF discharge plasma of tetrafluoroethylene(TFE, CF_2=CF_2)and hexamethyldisiloxane(HMDSO, (CH_3)_3-Si-O-Si-(CH_3)_3)gas mixture, and dielectric constant and thermal stability of the films have been investigated. Dielectric constant of the films has been revealed to be less than 2.5 for the HMDSO mixing ratio of 10%. Concerning thermal stability, Si-O and C-F_x bonds in the films have been found to be stable to 400℃. However, C-H_n bonds existing at the edge of atomic network in the films have been revealed to be thermally unstable. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Hexamethyldisiloxane / Low Dielectric Constant / Tetrafluoroethyelene / Plasma / Inter-Layer Dielectric / Amorphous Fluorinated Carbon |
Paper # | SDM98-179 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1998/12/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Plasma CVD of Low-Dielectric Constant Insulator Films Using Fluorocarbon Gas with HMDSO |
Sub Title (in English) | |
Keyword(1) | Hexamethyldisiloxane |
Keyword(2) | Low Dielectric Constant |
Keyword(3) | Tetrafluoroethyelene |
Keyword(4) | Plasma |
Keyword(5) | Inter-Layer Dielectric |
Keyword(6) | Amorphous Fluorinated Carbon |
1st Author's Name | Tatsuru SHIRAFUJI |
1st Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology() |
2nd Author's Name | Yasuo MIYAZAKI |
2nd Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology |
3rd Author's Name | Yasuaki HAYASHI |
3rd Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology |
4th Author's Name | Shigehiro NISHINO |
4th Author's Affiliation | Department of Electronicsand Information Science Kyoto Institute of Technology |
Date | 1998/12/10 |
Paper # | SDM98-179 |
Volume (vol) | vol.98 |
Number (no) | 445 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |