Presentation 1998/12/10
Plasma CVD of Low-Dielectric Constant Insulator Films Using Fluorocarbon Gas with HMDSO
Tatsuru SHIRAFUJI, Yasuo MIYAZAKI, Yasuaki HAYASHI, Shigehiro NISHINO,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Amorphous fluorinated carbon (a-C:F)films including Si-O components have been prepared from RF discharge plasma of tetrafluoroethylene(TFE, CF_2=CF_2)and hexamethyldisiloxane(HMDSO, (CH_3)_3-Si-O-Si-(CH_3)_3)gas mixture, and dielectric constant and thermal stability of the films have been investigated. Dielectric constant of the films has been revealed to be less than 2.5 for the HMDSO mixing ratio of 10%. Concerning thermal stability, Si-O and C-F_x bonds in the films have been found to be stable to 400℃. However, C-H_n bonds existing at the edge of atomic network in the films have been revealed to be thermally unstable.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Hexamethyldisiloxane / Low Dielectric Constant / Tetrafluoroethyelene / Plasma / Inter-Layer Dielectric / Amorphous Fluorinated Carbon
Paper # SDM98-179
Date of Issue

Conference Information
Committee SDM
Conference Date 1998/12/10(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Plasma CVD of Low-Dielectric Constant Insulator Films Using Fluorocarbon Gas with HMDSO
Sub Title (in English)
Keyword(1) Hexamethyldisiloxane
Keyword(2) Low Dielectric Constant
Keyword(3) Tetrafluoroethyelene
Keyword(4) Plasma
Keyword(5) Inter-Layer Dielectric
Keyword(6) Amorphous Fluorinated Carbon
1st Author's Name Tatsuru SHIRAFUJI
1st Author's Affiliation Department of Electronics and Information Science Kyoto Institute of Technology()
2nd Author's Name Yasuo MIYAZAKI
2nd Author's Affiliation Department of Electronics and Information Science Kyoto Institute of Technology
3rd Author's Name Yasuaki HAYASHI
3rd Author's Affiliation Department of Electronics and Information Science Kyoto Institute of Technology
4th Author's Name Shigehiro NISHINO
4th Author's Affiliation Department of Electronicsand Information Science Kyoto Institute of Technology
Date 1998/12/10
Paper # SDM98-179
Volume (vol) vol.98
Number (no) 445
Page pp.pp.-
#Pages 6
Date of Issue