| Presentation | 1998/12/10 Magnetoresistance Effect of Four Terminal MOSFET Induced by Lateral Magnetic Field Nobuyuki MIZUKAWA, Koji MATSUNAGA, Sadayoshi HIRAI, Tadashi OHACHI, Ichiro TANIGUCHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To evaluate the magnetoresistance effect of a four terminal MOSFET in ducedby bias voltage V_CB between the n-channel and the substrate(i.e.betwe enthesource and the substrate)with parallel magnetic field to a substrate, relative lateral sensitivity S_RD and relative vertical sensitivity S_RT were defined. Correlation between these two sensitivities was examined. In the four terminal MOSFET, S_RD depends on the operation of a three terminal MOSFET and S_RT depends on the carrier mobility of the depletion layer. The product of the two sensitivities is equal to that of the carrier mobilities in the n-channel and the depletion layer. It is experimentally that the relative sensitivities become higher when the resistivity of the substrate is lower. The maximum value of S_RD was 0.13[T^-1]andthatof S_RT was 0.41[T^-1]. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | four terminal MOSFET / magnetoresistance effect / relative sensitivity / resistivity / carrier mobility |
| Paper # | SDM98-183 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Magnetoresistance Effect of Four Terminal MOSFET Induced by Lateral Magnetic Field |
| Sub Title (in English) | |
| Keyword(1) | four terminal MOSFET |
| Keyword(2) | magnetoresistance effect |
| Keyword(3) | relative sensitivity |
| Keyword(4) | resistivity |
| Keyword(5) | carrier mobility |
| 1st Author's Name | Nobuyuki MIZUKAWA |
| 1st Author's Affiliation | Department of Electrical Engineering, Doshisha University() |
| 2nd Author's Name | Koji MATSUNAGA |
| 2nd Author's Affiliation | Department of Electrical Engineering, Doshisha University |
| 3rd Author's Name | Sadayoshi HIRAI |
| 3rd Author's Affiliation | Department of Electrical Engineering, Doshisha University |
| 4th Author's Name | Tadashi OHACHI |
| 4th Author's Affiliation | Department of Electrical Engineering, Doshisha University |
| 5th Author's Name | Ichiro TANIGUCHI |
| 5th Author's Affiliation | Department of Electrical Engineering, Doshisha University |
| Date | 1998/12/10 |
| Paper # | SDM98-183 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |