| Presentation | 1998/12/10 Formation of Ultra-thin SiO_2 at Low Temperature by ECR Remote Plasma System K Moriizumi, Y Ueda, T Fuyuki, H Matsunami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Nm-order ultra-thin SiO_2 films were formed at a low temperature of 500℃ by ECR remote plasma system. Plasma-emission spectra showed that the oxidation rate could be controlled by O_2 and Ar flow rates. The eletric properties of low-temperature SiO_2 films were evaluated by I-V and high-frequency C-V measurements. It was shown that the formation of atomic-scale preoxide before remote-plasma oxidation decreased the leakage current at low electric field down to detection-limit and that it improved Si/SiO_2 interface characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ultra-thin SiO_2 / ECR remote plasma / low-temperature oxidation / OES / preoxide |
| Paper # | SDM98-175 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Ultra-thin SiO_2 at Low Temperature by ECR Remote Plasma System |
| Sub Title (in English) | |
| Keyword(1) | ultra-thin SiO_2 |
| Keyword(2) | ECR remote plasma |
| Keyword(3) | low-temperature oxidation |
| Keyword(4) | OES |
| Keyword(5) | preoxide |
| 1st Author's Name | K Moriizumi |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Y Ueda |
| 2nd Author's Affiliation | Department of Electronic Scienceand Engineering, Kyoto University |
| 3rd Author's Name | T Fuyuki |
| 3rd Author's Affiliation | Graduate School of Material Science, Nara Institute of Science and Technology |
| 4th Author's Name | H Matsunami |
| 4th Author's Affiliation | Department of Electronic Scienceand Engineering, Kyoto University |
| Date | 1998/12/10 |
| Paper # | SDM98-175 |
| Volume (vol) | vol.98 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |