Summary
International Symposium on Antennas and Propagation
2010
Session Number:3TC2
Session:
Number:3TC2-2
Thru-Line (TL) Calibration Technique for On-Wafer Measurement
Takuichi Hirano, Kenichi Okada, Jiro Hirokawa, Makoto Ando,
pp.-
Publication Date:2010/11/23
Online ISSN:2188-5079
Summary:
Millimeter-wave CMOS RF circuits have been received substantial attention in recent years, motivated by the advancement of CMOS process. Figure 1 shows on-wafer measurement using probes, which is common in research and development. De-embedding is necessary to remove the effect of pads in on-wafer measurement of RF circuits. Thru-Reflect-Line (TRL) calibration [1] and/or de-embedding method using open and short patterns [2] are often used. The authors applied the Thru-Line (TL) calibration method [3] to remove the effect of pads in the measurement of RF circuits on a Si CMOS substrate. TL calibration requires two patterns (thru and line) while TRL calibration requires three patterns (thru, reflect and line). TL calibration can characterize both pads under the assumption that both pads have the same characteristics while TRL calibration can not characterize pads. In this paper, the effectiveness of the TL calibration is investigated for the deembedding of the influence of pads in on-wafer measurement.