Summary

International Technical Conference on Circuits/Systems, Computers and Communications

2016

Session Number:P1

Session:

Number:P1-10

A Case for PRAM-based NVDIMM

Kyungyeon Yang,  Jae W. Lee ,  

pp.869-870

Publication Date:2016/7/10

Online ISSN:2188-5079

DOI:10.34385/proc.61.P1-10

PDF download (982.5KB)

Summary:
NVDIMM has drawn much attention as a solution to back up the main memory at power outage. However, today's NVDIMM typically uses NAND flash devices, which are not byte-addressable and have poor write performance. This paper proposes PRAM-based NVDIMM (P-NVDIMM), which replaces NAND flash devices with PRAM devices. Since PRAM is byte-addressable with low read latency, we place read-intensive pages into PRAM, instead of DRAM, to save refresh power. Furthermore, the write speed of PRAM is much faster than that of NAND flash to significantly reduce the energy consumption for backup. During normal operations P-NVDIMM saves 29% of energy consumption compared to the flash-based NVDIMM, while incurring only 3.9% of IPC degradation. Besides, P-NVDIMM consumes only 1.22% of energy to back up 8GB DRAM.