Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:P1
Session:
Number:P1-10
A Case for PRAM-based NVDIMM
Kyungyeon Yang, Jae W. Lee ,
pp.869-870
Publication Date:2016/7/10
Online ISSN:2188-5079
Summary:
NVDIMM has drawn much attention as a solution to back up the main memory at power outage. However, today's NVDIMM typically uses NAND flash devices, which are not byte-addressable and have poor write performance. This paper proposes PRAM-based NVDIMM (P-NVDIMM), which replaces NAND flash devices with PRAM devices. Since PRAM is byte-addressable with low read latency, we place read-intensive pages into PRAM, instead of DRAM, to save refresh power. Furthermore, the write speed of PRAM is much faster than that of NAND flash to significantly reduce the energy consumption for backup. During normal operations P-NVDIMM saves 29% of energy consumption compared to the flash-based NVDIMM, while incurring only 3.9% of IPC degradation. Besides, P-NVDIMM consumes only 1.22% of energy to back up 8GB DRAM.