Summary
International Symposium on Antennas and Propagation
2010
Session Number:3TE3
Session:
Number:3TE3-4
Eigenmode Analysis of Propagation Constant for a Transmission Line with Dummy Metals on a Si CMOS Substrate
Yuya Ono, Takuichi Hirano, Kenichi Okada, Jiro Hirokawa, Makoto Ando,
pp.-
Publication Date:2010/11/23
Online ISSN:2188-5079
Summary:
Millimeter-wave CMOS RF circuits have been received substantial attention in recent years, motivated by the advancement of CMOS process. The RF circuit consists of several metal layers and vias. The metal filling rate must be satisfied, usually 25% to 75% to satisfy design rules in the semiconductor process, especially chemical mechanical polishing (CMP) rule. Because of CMP rule, dummy metals with 2 um up to 10 um square are necessary all over the chip. The influence of dummy metals is not negligible in millimeter-wave band though it has been ignored below the frequency range of a few GHz [1]. In this study, the propagation constant of a guided microstrip line on a Si CMOS substrate is analyzed by the eigenvalue analysis for one period of the line, which is considered as a periodic structure [2][3]. The calculated propagation constant is compared with the measurement of a chip fabricated by the CMOS 0.18um process.