Electronics-Component Parts and Materials(Date:2013/11/21)

Presentation
表紙

,  

[Date]2013/11/21
[Paper #]
目次

,  

[Date]2013/11/21
[Paper #]
High-Power Operation and Applications of InGaN Laser Diode

Hiroyuki Hagino,  Katsuya Samonji,  Shinji Yoshida,  Shinichi Takigawa,  Kiyoshi Morimoto,  Toshiyuki Takizawa,  Hideki Kasugai,  Kazuhiko Yamanaka,  Takuma Katayama,  

[Date]2013/11/21
[Paper #]ED2013-64,CPM2013-123,LQE2013-99
Texture formation by anisotropic dry etching of m-plane GaN, and light extraction efficiency improvement of textured m-plane GaN LED

Toshiyuki Fujita,  Atsushi Yamada,  Akira Inoue,  Ryou Kato,  Toshiya Yokokawa,  

[Date]2013/11/21
[Paper #]ED2013-65,CPM2013-124,LQE2013-100
Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED

Tsubasa NAKASHIMA,  Kenichiro TAKEDA,  Motoaki IWAYA,  Satoshi KAMIYAMA,  Tetsuya TAKEUCHI,  Isamu AKASAKI,  Hiroshi AMANO,  

[Date]2013/11/21
[Paper #]ED2013-66,CPM2013-125,LQE2013-101
Bow management of substrate for nitride semiconductor devices by internally focused laser processing : application to silicon substrate

Natsuko Aota,  Hideo Aida,  Hidetoshi Takeda,  

[Date]2013/11/21
[Paper #]ED2013-67,CPM2013-126,LQE2013-102
Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding

Shota Nishida,  Jianbo Liang,  Masashi Morimoto,  Naoteru Shigekawa,  Manabu Arai,  

[Date]2013/11/21
[Paper #]ED2013-68,CPM2013-127,LQE2013-103
Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding

Jianbo LIANG,  Shota NiSHIDA,  Masashi MORIMOTO,  Naoteru SHIGEGAWA,  

[Date]2013/11/21
[Paper #]ED2013-69,CPM2013-128,LQE2013-104
Investigation on the optimum MQW structure for InGaN/GaN solar cells

Noriyuki WATANABE,  Manabu MITSUHARA,  Haruki YOKOYAMA,  Jianbo LIANG,  Naoteru SHIGEKAWA,  

[Date]2013/11/21
[Paper #]ED2013-70,CPM2013-129,LQE2013-105
Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates

Kenji SHIOJIMA,  Yuhei KIHARA,  Toshichika AOKI,  Naoki KANEDA,  Tomoyoshi MISHIMA,  

[Date]2013/11/21
[Paper #]ED2013-71,CPM2013-130,LQE2013-106
AC Operation of Low-Mg-Doped p-GaN Schottky Diodes

Kenji SHIOJIMA,  Toshichika AOKI,  Naoki KANEDA,  Tomoyoshi MISHIMA,  

[Date]2013/11/21
[Paper #]ED2013-72,CPM2013-131,LQE2013-107
Quantum Efficiency of p-GaN with NEA surface for high brightness electron source

Takuya Maekawa,  Yoshio Honda,  Hiroshi Amano,  Tomohiro Nishitani,  

[Date]2013/11/21
[Paper #]ED2013-73,CPM2013-132,LQE2013-108
Study on C doping in GaN and AlGaN by MOVPE

Yuya WAKASUGI,  Yoshio HONDA,  Hiroshi AMANO,  

[Date]2013/11/21
[Paper #]ED2013-74,CPM2013-133,LQE2013-109
A novel method for crystallizations of aluminum nitride

PeiTsen WU,  Mitsuru FUNATO,  Yoichi KAWAKAMI,  

[Date]2013/11/21
[Paper #]ED2013-75,CPM2013-134,LQE2013-110
Fabrication of the multi-junction GaInN based solar cells using tunnel junction

Hironori Kurokawa,  Tomomi Goda,  Mitsuru Kaga,  Motoaki Iwaya,  Tetsuya Takeuchi,  Satoshi Kamiyama,  Isamu Akasaki,  Hiroshi Amano,  

[Date]2013/11/21
[Paper #]ED2013-76,CPM2013-135,LQE2013-111
OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures

Takanori ARAI,  Ryuta WAKAMATSU,  Dong-gun LEE,  Atsushi KOIZUMI,  Yasufumi FUJIWARA,  

[Date]2013/11/21
[Paper #]ED2013-77,CPM2013-136,LQE2013-112
Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy

Souichirou Kuwata,  Atsushi Koizumi,  Yasufumi Fujiwara,  

[Date]2013/11/21
[Paper #]ED2013-78,CPM2013-137,LQE2013-113
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate

Masayoshi KATAGIRI,  Kenta IZUMI,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Hidehiko OKU,  Hidetoshi ASAMURA,  Keisuke KAWAMURA,  

[Date]2013/11/21
[Paper #]ED2013-79,CPM2013-138,LQE2013-114
Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE

Gou NISHIO,  Shuhei SUZUKI,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Hiroyuki FUKUYAMA,  

[Date]2013/11/21
[Paper #]ED2013-80,CPM2013-139,LQE2013-115
Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE

Shin KITAGAWA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  

[Date]2013/11/21
[Paper #]ED2013-81,CPM2013-140,LQE2013-116
12>> 1-20hit(32hit)