Presentation | 2013-11-28 Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa, Manabu Arai, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The physical and electrical properties of p^+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V), capacitance-voltage (C-V), and breakdown characteristics measurements. The I-V characteristics of p^+-Si/n-4H-SiC junctions showed rectifying properties at room temperature. The flat-band voltage was around 1.0V and the conduction band offset of p^+-Si/n-4H-SiC junctions was determined to be ~0.02 eV from the C-V characteristics. The obtained breakdown voltages from the breakdown characteristics corresponded to the electric field of ~0.88 MV/cm (not annealing) and ~2.11 MV/cm (annealing) and these values were higher than critical electric fields at breakdown in bulk Si (~0.3 MV/cm) and in Si-based one-sided abrupt junction (~0.65 MV/cm). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | surface-activated bonding / Si / SiC / current-voltage characteristics / heterojunction |
Paper # | ED2013-68,CPM2013-127,LQE2013-103 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2013/11/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding |
Sub Title (in English) | |
Keyword(1) | surface-activated bonding |
Keyword(2) | Si |
Keyword(3) | SiC |
Keyword(4) | current-voltage characteristics |
Keyword(5) | heterojunction |
1st Author's Name | Shota Nishida |
1st Author's Affiliation | Graduate School of Engineering, Osaka City University() |
2nd Author's Name | Jianbo Liang |
2nd Author's Affiliation | Graduate School of Engineering, Osaka City University |
3rd Author's Name | Masashi Morimoto |
3rd Author's Affiliation | Graduate School of Engineering, Osaka City University |
4th Author's Name | Naoteru Shigekawa |
4th Author's Affiliation | Graduate School of Engineering, Osaka City University |
5th Author's Name | Manabu Arai |
5th Author's Affiliation | New Japan Radio Co., Ltd. |
Date | 2013-11-28 |
Paper # | ED2013-68,CPM2013-127,LQE2013-103 |
Volume (vol) | vol.113 |
Number (no) | 330 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |