Presentation 2013-11-28
Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding
Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa, Manabu Arai,
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Abstract(in English) The physical and electrical properties of p^+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V), capacitance-voltage (C-V), and breakdown characteristics measurements. The I-V characteristics of p^+-Si/n-4H-SiC junctions showed rectifying properties at room temperature. The flat-band voltage was around 1.0V and the conduction band offset of p^+-Si/n-4H-SiC junctions was determined to be ~0.02 eV from the C-V characteristics. The obtained breakdown voltages from the breakdown characteristics corresponded to the electric field of ~0.88 MV/cm (not annealing) and ~2.11 MV/cm (annealing) and these values were higher than critical electric fields at breakdown in bulk Si (~0.3 MV/cm) and in Si-based one-sided abrupt junction (~0.65 MV/cm).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) surface-activated bonding / Si / SiC / current-voltage characteristics / heterojunction
Paper # ED2013-68,CPM2013-127,LQE2013-103
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Conference Information
Committee CPM
Conference Date 2013/11/21(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding
Sub Title (in English)
Keyword(1) surface-activated bonding
Keyword(2) Si
Keyword(3) SiC
Keyword(4) current-voltage characteristics
Keyword(5) heterojunction
1st Author's Name Shota Nishida
1st Author's Affiliation Graduate School of Engineering, Osaka City University()
2nd Author's Name Jianbo Liang
2nd Author's Affiliation Graduate School of Engineering, Osaka City University
3rd Author's Name Masashi Morimoto
3rd Author's Affiliation Graduate School of Engineering, Osaka City University
4th Author's Name Naoteru Shigekawa
4th Author's Affiliation Graduate School of Engineering, Osaka City University
5th Author's Name Manabu Arai
5th Author's Affiliation New Japan Radio Co., Ltd.
Date 2013-11-28
Paper # ED2013-68,CPM2013-127,LQE2013-103
Volume (vol) vol.113
Number (no) 330
Page pp.pp.-
#Pages 5
Date of Issue