| Presentation | 2013-11-29 Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi KATAGIRI, Kenta IZUMI, Hideto MIYAKE, Kazumasa HIRAMATSU, Hidehiko OKU, Hidetoshi ASAMURA, Keisuke KAWAMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. As it is well known, GaN is difficult to be grown on Si because of large lattice mismatch (17%), difference of thermal expansion (33%) and melt-back reaction between Ga and Si. To overcome these problems, we have studied on epitaxy of high-quality GaN on Si with a 3C-SiC intermediate layer. In this study, we investigated effects of 3C-SiC intermediate layer thickness on surface morphology, crystalline quality and curvature of sample. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si(111) / 3C-SiC / GaN / MOVPE |
| Paper # | ED2013-79,CPM2013-138,LQE2013-114 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/11/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate |
| Sub Title (in English) | |
| Keyword(1) | Si(111) |
| Keyword(2) | 3C-SiC |
| Keyword(3) | GaN |
| Keyword(4) | MOVPE |
| 1st Author's Name | Masayoshi KATAGIRI |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University() |
| 2nd Author's Name | Kenta IZUMI |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| 3rd Author's Name | Hideto MIYAKE |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| 4th Author's Name | Kazumasa HIRAMATSU |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| 5th Author's Name | Hidehiko OKU |
| 5th Author's Affiliation | Air Water R&D Co., Ltd. |
| 6th Author's Name | Hidetoshi ASAMURA |
| 6th Author's Affiliation | Air Water R&D Co., Ltd. |
| 7th Author's Name | Keisuke KAWAMURA |
| 7th Author's Affiliation | Air Water R&D Co., Ltd. |
| Date | 2013-11-29 |
| Paper # | ED2013-79,CPM2013-138,LQE2013-114 |
| Volume (vol) | vol.113 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |