Presentation 2013-11-28
Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates
Kenji SHIOJIMA, Yuhei KIHARA, Toshichika AOKI, Naoki KANEDA, Tomoyoshi MISHIMA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrations. Low-Si-doped-GaN films (12μm-thick) were grown on GaN substrates using MOCVD. Si and C concentrations were varied in the range of 1-9x10^<16>cm^<-3>. From the C-V carrier profiles, the net carrier concentration were well-controlled in the range between 0.7 and 2x10^<16>cm^<-3> for the samples with Si ≈ C. In the I-V characteristics, they showed good linearity in the forward current, and Schottky barrier height and n-value were obtained to be 1.04-1.10 eV, and 1.01-1.03, respectively. The reverse currents were as low as 10 pA at -200 V.
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Keyword(in English) GaN free-standing substrate / Schottky diode / Low carrier concentration / C doping
Paper # ED2013-71,CPM2013-130,LQE2013-106
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Committee CPM
Conference Date 2013/11/21(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates
Sub Title (in English)
Keyword(1) GaN free-standing substrate
Keyword(2) Schottky diode
Keyword(3) Low carrier concentration
Keyword(4) C doping
1st Author's Name Kenji SHIOJIMA
1st Author's Affiliation Graduate School of Electrical and Electronics Engineering, University of Fukui()
2nd Author's Name Yuhei KIHARA
2nd Author's Affiliation Graduate School of Electrical and Electronics Engineering, University of Fukui
3rd Author's Name Toshichika AOKI
3rd Author's Affiliation Graduate School of Electrical and Electronics Engineering, University of Fukui
4th Author's Name Naoki KANEDA
4th Author's Affiliation Cable Materials Research Lab., Hitachi Metals Ltd.
5th Author's Name Tomoyoshi MISHIMA
5th Author's Affiliation Cable Materials Research Lab., Hitachi Metals Ltd.
Date 2013-11-28
Paper # ED2013-71,CPM2013-130,LQE2013-106
Volume (vol) vol.113
Number (no) 330
Page pp.pp.-
#Pages 4
Date of Issue