Presentation | 2013-11-28 Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates Kenji SHIOJIMA, Yuhei KIHARA, Toshichika AOKI, Naoki KANEDA, Tomoyoshi MISHIMA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrations. Low-Si-doped-GaN films (12μm-thick) were grown on GaN substrates using MOCVD. Si and C concentrations were varied in the range of 1-9x10^<16>cm^<-3>. From the C-V carrier profiles, the net carrier concentration were well-controlled in the range between 0.7 and 2x10^<16>cm^<-3> for the samples with Si ≈ C. In the I-V characteristics, they showed good linearity in the forward current, and Schottky barrier height and n-value were obtained to be 1.04-1.10 eV, and 1.01-1.03, respectively. The reverse currents were as low as 10 pA at -200 V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN free-standing substrate / Schottky diode / Low carrier concentration / C doping |
Paper # | ED2013-71,CPM2013-130,LQE2013-106 |
Date of Issue |
Conference Information | |
Committee | CPM |
---|---|
Conference Date | 2013/11/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates |
Sub Title (in English) | |
Keyword(1) | GaN free-standing substrate |
Keyword(2) | Schottky diode |
Keyword(3) | Low carrier concentration |
Keyword(4) | C doping |
1st Author's Name | Kenji SHIOJIMA |
1st Author's Affiliation | Graduate School of Electrical and Electronics Engineering, University of Fukui() |
2nd Author's Name | Yuhei KIHARA |
2nd Author's Affiliation | Graduate School of Electrical and Electronics Engineering, University of Fukui |
3rd Author's Name | Toshichika AOKI |
3rd Author's Affiliation | Graduate School of Electrical and Electronics Engineering, University of Fukui |
4th Author's Name | Naoki KANEDA |
4th Author's Affiliation | Cable Materials Research Lab., Hitachi Metals Ltd. |
5th Author's Name | Tomoyoshi MISHIMA |
5th Author's Affiliation | Cable Materials Research Lab., Hitachi Metals Ltd. |
Date | 2013-11-28 |
Paper # | ED2013-71,CPM2013-130,LQE2013-106 |
Volume (vol) | vol.113 |
Number (no) | 330 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |