| Presentation | 2013-11-29 Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Eu-doped GaN (GaN:Eu) is a promising material to achieve red light-emitting diodes (LEDs) based on nitride semiconductors. The successful growth of GaN:Eu by organometallic vapor phase epitaxy and room-temperature red light emission from GaN:Eu under current injection have been reported. Recently, low energy transfer efficiency of the major Eu site in GaN:Eu was reported. Therefore, it is important to improve the energy transfer efficiency from GaN host material to Eu ions to increase light output power. In the standard excitation model, Eu excitation efficiency is influenced by the electronic properties of the Eu-related traps. In this study, we investigated the electronic properties of the Eu-related traps by deep-level transient spectroscopy (DLTS). In the DLTS spectra, we found at least two peaks owing to Eu-related electron traps. The energy positions of the traps were approximately the same as those reported in photoluminescence excitation measurements. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Eu-doped GaN / DLTS |
| Paper # | ED2013-78,CPM2013-137,LQE2013-113 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/11/21(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Eu-doped GaN |
| Keyword(2) | DLTS |
| 1st Author's Name | Souichirou Kuwata |
| 1st Author's Affiliation | Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University() |
| 2nd Author's Name | Atsushi Koizumi |
| 2nd Author's Affiliation | Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University |
| 3rd Author's Name | Yasufumi Fujiwara |
| 3rd Author's Affiliation | Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University |
| Date | 2013-11-29 |
| Paper # | ED2013-78,CPM2013-137,LQE2013-113 |
| Volume (vol) | vol.113 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |