| Presentation | 2013-11-29 Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE Gou NISHIO, Shuhei SUZUKI, Hideto MIYAKE, Kazumasa HIRAMATSU, Hiroyuki FUKUYAMA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlN has attracted attention for applications in the deep ultraviolet region, because of its wide direct band-gap and excellent thermal and chemical stabilities. High-quality AlN layers were grown on thermally-annealed AlN buffer layer on sapphire by metal-organic vapor phase epitaxy (MOVPE). By annealing in a carbon-saturated N_2-CO gas mixture, the surface morphologies of AlN buffer layers were dramatically changed and the RMS values were improved. Additionally, the FWHM values of XRCs of the AlN buffer layers significantly decreased by annealing and the threading dislocation density of AlN grown on thermally-annealed AlN buffer layer at 1700℃ was less than 1.3×10^9cm^<-2>. These results indicate that the high-temperature annealing of AlN buffer layer is useful technique for reduction of dislocations in AlN grown on sapphire. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | annealing / N_2-CO / AlN / MOVPE / sapphire / buffer layer |
| Paper # | ED2013-80,CPM2013-139,LQE2013-115 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/11/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE |
| Sub Title (in English) | |
| Keyword(1) | annealing |
| Keyword(2) | N_2-CO |
| Keyword(3) | AlN |
| Keyword(4) | MOVPE |
| Keyword(5) | sapphire |
| Keyword(6) | buffer layer |
| 1st Author's Name | Gou NISHIO |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University() |
| 2nd Author's Name | Shuhei SUZUKI |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| 3rd Author's Name | Hideto MIYAKE |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| 4th Author's Name | Kazumasa HIRAMATSU |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| 5th Author's Name | Hiroyuki FUKUYAMA |
| 5th Author's Affiliation | Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University |
| Date | 2013-11-29 |
| Paper # | ED2013-80,CPM2013-139,LQE2013-115 |
| Volume (vol) | vol.113 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |