| Presentation | 2013-11-28 Bow management of substrate for nitride semiconductor devices by internally focused laser processing : application to silicon substrate Natsuko Aota, Hideo Aida, Hidetoshi Takeda, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Bow management for heteroepitaxy of nitride semiconductor films on silicon substrate has been required, as substrate bow is introduced during and after heteroepitaxial growth. We investigated bow management technique for silicon substrate before and after GaN film growth by using internally focused laser. The substrate inside is modified by the laser and then stress is introduced inside the substrate, resulting in substrate bow. Modified layers were introduced into silicon substrate inside under various conditions to study bow control system of silicon substrate. As a result, it was found that the substrate bow can be controlled by depth of modified layers in substrate thickness and pattern pitch of modified layers. It was also suggested that the substrate bow during GaN film growth on silicon substrate can be controlled by applying initial bow. We applied the laser process to bow control of GaN on silicon substrate to compensate stress induced by GaN films. We revealed that the substrate bow of GaN on silicon substrate can be controlled by pattern pitch of modified layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Heteroepitaxial growth / Internally focused laser / GaN on silicon |
| Paper # | ED2013-67,CPM2013-126,LQE2013-102 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/11/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Bow management of substrate for nitride semiconductor devices by internally focused laser processing : application to silicon substrate |
| Sub Title (in English) | |
| Keyword(1) | Heteroepitaxial growth |
| Keyword(2) | Internally focused laser |
| Keyword(3) | GaN on silicon |
| 1st Author's Name | Natsuko Aota |
| 1st Author's Affiliation | Namiki Precision Jewel Co. Ltd.() |
| 2nd Author's Name | Hideo Aida |
| 2nd Author's Affiliation | Namiki Precision Jewel Co. Ltd. |
| 3rd Author's Name | Hidetoshi Takeda |
| 3rd Author's Affiliation | Namiki Precision Jewel Co. Ltd. |
| Date | 2013-11-28 |
| Paper # | ED2013-67,CPM2013-126,LQE2013-102 |
| Volume (vol) | vol.113 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |