| Presentation | 2013-11-29 Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE Shin KITAGAWA, Hideto MIYAKE, Kazumasa HIRAMATSU, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Aluminum nitride (AlN) has a direct band-gap energy of 6.2 eV, which is the largest band-gap energy among III-V semiconductors. Consequently, AlN has significant potential for many applications, such as high power ultra violet (UV) light emitting diodes, laser diodes, and UV detectors. 6H-SiC is a more suitable substrate than sapphire because of its better lattice match to AlN. However, AlN grown on 6H-SiC substrate has high dislocation density for 10^9-10^<10>cm^<-2>. There is a method of controlling nucleation and lateral growth using the three-dimensional (3D) and two-dimensional (2D) growth modes to reduce dislocation density. In this work, AlN were grown directly on 6H-SiC substrate by low-pressure HVPE. Then, we performed AlN growth on a trench-patterned 6H-SiC substrate and achieved reduction of threading dislocations density. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Low-pressure HVPE / AlN / 6H-SiC / 3D-2D method |
| Paper # | ED2013-81,CPM2013-140,LQE2013-116 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/11/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE |
| Sub Title (in English) | |
| Keyword(1) | Low-pressure HVPE |
| Keyword(2) | AlN |
| Keyword(3) | 6H-SiC |
| Keyword(4) | 3D-2D method |
| 1st Author's Name | Shin KITAGAWA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University() |
| 2nd Author's Name | Hideto MIYAKE |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| 3rd Author's Name | Kazumasa HIRAMATSU |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University |
| Date | 2013-11-29 |
| Paper # | ED2013-81,CPM2013-140,LQE2013-116 |
| Volume (vol) | vol.113 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |