Presentation | 2013-11-28 Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Jianbo LIANG, Shota NiSHIDA, Masashi MORIMOTO, Naoteru SHIGEGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The electrical properties of pn junctions with various semiconductor materials with different doping concentrations, InGaP/(100)Si n-on-p,InGaP/(100)Si p-on-n and InGaP/(111)Si p-on-n double junction cells fabricated by using surface activated bonding (SAB) were investigated. The I-V characteristics of pn junctions composed of semiconductor junction layers of high impurity concentration showed ohmic-like properties. We obtained the lowest interfacial resistance (0.13Ω・cm^2) in the p^+-GaAs/n^<++>-Si junction, the interface resistance decrease with increasing impurity concentration. Its value was considered to be sufficiently low on the solar cell application. The open circuit voltage (V_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | surface activated bonding / interface resistance / power loss / InGaP/Si tandem solar cells / conversion efficiency / open voltage / series resistance |
Paper # | ED2013-69,CPM2013-128,LQE2013-104 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2013/11/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding |
Sub Title (in English) | |
Keyword(1) | surface activated bonding |
Keyword(2) | interface resistance |
Keyword(3) | power loss |
Keyword(4) | InGaP/Si tandem solar cells |
Keyword(5) | conversion efficiency |
Keyword(6) | open voltage |
Keyword(7) | series resistance |
1st Author's Name | Jianbo LIANG |
1st Author's Affiliation | Graduate School of Engineering, Osaka City University() |
2nd Author's Name | Shota NiSHIDA |
2nd Author's Affiliation | Graduate School of Engineering, Osaka City University |
3rd Author's Name | Masashi MORIMOTO |
3rd Author's Affiliation | Graduate School of Engineering, Osaka City University |
4th Author's Name | Naoteru SHIGEGAWA |
4th Author's Affiliation | Graduate School of Engineering, Osaka City University |
Date | 2013-11-28 |
Paper # | ED2013-69,CPM2013-128,LQE2013-104 |
Volume (vol) | vol.113 |
Number (no) | 330 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |