Presentation 2013-11-28
A novel method for crystallizations of aluminum nitride
PeiTsen WU, Mitsuru FUNATO, Yoichi KAWAKAMI,
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Abstract(in English) In this work, a new method of AlN crystal growth is proposed. AlN powders, whiskers, and films have successfully been synthesized in the temperature range from 1200 to 1500℃ using just Al powders and nitrogen gas. The formation of AlN crystals was confirmed by x-ray diffraction. Photoluminescence spectroscopy show intense deep-level emissions, indicating a high potential of the synthesized AlN as a light emitting material. In addition, an AlN film with a thickness of only 1.38μm can be separated from the sapphire substrate after the growth likely due to the decomposition of sapphire.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Aluminum nitride / AlN powder / AlN whisker / AlN film / Aluminum powder / Nitrogen gas
Paper # ED2013-75,CPM2013-134,LQE2013-110
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Conference Information
Committee CPM
Conference Date 2013/11/21(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A novel method for crystallizations of aluminum nitride
Sub Title (in English)
Keyword(1) Aluminum nitride
Keyword(2) AlN powder
Keyword(3) AlN whisker
Keyword(4) AlN film
Keyword(5) Aluminum powder
Keyword(6) Nitrogen gas
1st Author's Name PeiTsen WU
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Mitsuru FUNATO
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name Yoichi KAWAKAMI
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
Date 2013-11-28
Paper # ED2013-75,CPM2013-134,LQE2013-110
Volume (vol) vol.113
Number (no) 330
Page pp.pp.-
#Pages 5
Date of Issue