Presentation	2013-11-28 AC Operation of Low-Mg-Doped p-GaN Schottky Diodes Kenji SHIOJIMA, Toshichika AOKI, Naoki KANEDA, Tomoyoshi MISHIMA,
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Abstract(in English)	Current-voltage (I-V) characteristics with variations of voltage sweep speed (v_) and changing sweep directions, and alternating current (AC) operation of low-Mg-doped p-GaN Schottky contacts were analyzed. In the I-V characteristics, proportional relationship between v_ and current, and polarity inversion of the current were observed when the applied voltage was low, which indicates the existence of a displacement current. In the AC operations under the square- and sinusoidal-wave input, a conventional rectifying operation was observed when the input voltage was relatively high. However, we found differential operation in the output current when the input voltage was low, where the displacement current was dominant.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	p-GaN / Schottky diode / Low Mg doping / Displacement current / AC operation
Paper #	ED2013-72,CPM2013-131,LQE2013-107
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Committee	CPM
Conference Date	2013/11/21(1days)
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Paper Information
Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	AC Operation of Low-Mg-Doped p-GaN Schottky Diodes
Sub Title (in English)
Keyword(1)	p-GaN
Keyword(2)	Schottky diode
Keyword(3)	Low Mg doping
Keyword(4)	Displacement current
Keyword(5)	AC operation
1st Author's Name	Kenji SHIOJIMA
1st Author's Affiliation	Graduate School of Electrical and Electronics Engineering, University of Fukui()
2nd Author's Name	Toshichika AOKI
2nd Author's Affiliation	Graduate School of Electrical and Electronics Engineering, University of Fukui
3rd Author's Name	Naoki KANEDA
3rd Author's Affiliation	Cable Materials Research Lab., Hitachi Metals Ltd.
4th Author's Name	Tomoyoshi MISHIMA
4th Author's Affiliation	Cable Materials Research Lab., Hitachi Metals Ltd.
Date	2013-11-28
Paper #	ED2013-72,CPM2013-131,LQE2013-107
Volume (vol)	vol.113
Number (no)	330
Page	pp.pp.-
#Pages	4
Date of Issue