Presentation | 2013-11-28 Study on C doping in GaN and AlGaN by MOVPE Yuya WAKASUGI, Yoshio HONDA, Hiroshi AMANO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and optical properties by Hall effect measurement and cathodeluminescence (CL) measurement. Hole concentration in GaN increased with increase of C concentration at low C doping level, although that in AlGaN decreased with increase of C_2H_2 flow rate. All the samples show similar CL with peak wavelength of about 440nm. We also grew Mg/C delta co-doped GaN. Delta doping is found to be effective for realizing higher hole concentration than the conventional one. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / C / Mg / doping / MOVPE |
Paper # | ED2013-74,CPM2013-133,LQE2013-109 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2013/11/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Study on C doping in GaN and AlGaN by MOVPE |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | C |
Keyword(4) | Mg |
Keyword(5) | doping |
Keyword(6) | MOVPE |
1st Author's Name | Yuya WAKASUGI |
1st Author's Affiliation | Graduate School of Engineering, Nagoya University() |
2nd Author's Name | Yoshio HONDA |
2nd Author's Affiliation | Graduate School of Engineering, Nagoya University |
3rd Author's Name | Hiroshi AMANO |
3rd Author's Affiliation | Graduate School of Engineering, Nagoya University:Akasaki Research Center, Nagoya University |
Date | 2013-11-28 |
Paper # | ED2013-74,CPM2013-133,LQE2013-109 |
Volume (vol) | vol.113 |
Number (no) | 330 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |