Electronics-Integrated Circuits and Devices(Date:1999/01/20)

Presentation
表紙

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[Date]1999/1/20
[Paper #]
目次

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[Date]1999/1/20
[Paper #]
Ultra-high-speed Small-scaled InGaP/GaAs HBT's and their Circuit Applications

Tohru Oka,  Koji Hirata,  Kiyoshi Ouchi,  Hiroyuki Uchiyama,  Takafumi Taniguchi,  Kazuhiro Mochizuki,  Tohru Nakamura,  

[Date]1999/1/20
[Paper #]ED98-183,MW98-146,ICD98-250
MOVPE-Grown InP/InGaAs HBTs with a Carbon-Doped Base Layer

Shoji Yamahata,  kenji Kurishima,  Hiroki Nakajima,  Noriyuki Watanabe,  Yasunobu Ishii,  

[Date]1999/1/20
[Paper #]ED98-184,MW98-147,ICD98-251
30-nm-Gate InAlAs/InGaAs HEMTs Lattice-Matched to InP Substrates and Their RF Characteristics

Tetsuya Suemitsu,  Tetsuyoshi Ishii,  Haruki Yokoyama,  Yohtaro Umeda,  Takatomo Enoki,  Yasunobu Ishii,  Toshiaki Tamamura,  

[Date]1999/1/20
[Paper #]ED98-185,MW98-148,ICD98-252
Analysis of Substrate-Trap effects on Turn-on Characteristics in GaAs MESFETs

A. Wakabayashi,  Y. Mitani,  K. Horio,  

[Date]1999/1/20
[Paper #]ED98-186,MW98-149,ICD98-253
Device Characterization of Semi-Insulating GaAs Substrate Grown by Vertical Boat Method for Ion-Implantation Process

Masaki Yanagisawa,  Shigeru Nakajima,  Takashi Sakurada,  Makoto Kiyama,  Shin-ichi Sawada,  Ryusuke Nakai,  

[Date]1999/1/20
[Paper #]ED98-187,MW98-150,ICD98-254
Improvement of Off-State Breakdown Voltage in Power GaAs MESFETs by Inserting a Neutral p-Buffer Layer

K. Kunihiro,  Y. Takahashi,  Y. Ohno,  

[Date]1999/1/20
[Paper #]ED98-188,MW98-151,ICD98-255
Design Methodology of the Distributed Analog IC's for Optical Transmission

Shunji Kimura,  Yuhki Imai,  Hiroyuki Kikuchi,  

[Date]1999/1/20
[Paper #]ED98-189,MW98-152,ICD98-256
Electromigration in gold line of GaAs IC

A. Ohta,  K. Yajima,  N. Higashisaka,  T. Heima,  T. Hisaka,  N. Tanino,  

[Date]1999/1/20
[Paper #]ED98-190,MW98-153,ICD98-257
The influence of SiON film composition on HIGFET characteristics

Katsushi Ohshika,  Jun Kuroda,  Hiroshi Yanazawa,  

[Date]1999/1/20
[Paper #]ED98-191,MW98-154,ICD98-258
Electromagnetic analisys of integrated transmission line and comparison of interconnection characteristics for transmission line and optical waveguide

TAKESHI DOI,  ATSUSHI IWATA,  

[Date]1999/1/20
[Paper #]ED98-192,MW98-155,ICD98-259
Process Induced Damage on RFCMOS

E. Morifuji,  T. Ohguro,  T. Yoshitomi,  H. Kimijima,  T. Morimoto,  H.S. Momose,  Y. Katsumata,  H. Iwai,  

[Date]1999/1/20
[Paper #]ED98-193,MW98-156,ICD98-260
A 0.2-μm BiCMOS Process Technology with Copper Metallization for Ultra High-Speed SRAMs

T. Hashimoto,  T. Kikuchi,  N. Ohashi,  T. Saito,  S. Wada,  A. Shima,  M. Kondo,  Y. Homma,  K. Watanabe,  

[Date]1999/1/20
[Paper #]ED98-194,MW98-157,ICD98-261
A 28GHz/120mW GaAs 256/258 Dual-Modulus Prescaler IC with 0.1-μm Double-Deck-Shaped(DDS)Gate E/D-HJFETs

Shigeki Wada,  Tadashi Maeda,  Masatoshi Tokushima,  Jin Yamazaki,  Masaoki Ishikawa,  Masahiro Fujii,  

[Date]1999/1/20
[Paper #]ED98-195,MW98-158,ICD98-262
Thermal Capacitance Noise and Operation Reliability of High-Speed Ultimate-Low Power MOS Circuit

Masaaki Hayashi,  Chugo Fujihashi,  

[Date]1999/1/20
[Paper #]ED98-196,MW98-159,ICD98-263
[OTHERS]

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[Date]1999/1/20
[Paper #]