Presentation 1999/1/20
Analysis of Substrate-Trap effects on Turn-on Characteristics in GaAs MESFETs
A. Wakabayashi, Y. Mitani, K. Horio,
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Abstract(in English) Effects of substrate traps on turn-on characteristics of GaAs MESFETs are studied by two-dimensional simulation. When the off-state gate voltage is more negative than the threshold(pinchi-off)voltage, abnormal current overshoot and subsequent slow transient are observed for the case with undoped semi-insulating substrate including an electron trap : EL2. Even if the surface-state effects are pronounced to show the gate-lag, the drain current may show the overshoot behavior at relatively early periods. The case of Cr-doped substrate with a hole trap : Cr is also sidcussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs MESFET / gate-lag / substrate traps / current overshoot / surface state / device simulation
Paper # ED98-186,MW98-149,ICD98-253
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Conference Date 1999/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Substrate-Trap effects on Turn-on Characteristics in GaAs MESFETs
Sub Title (in English)
Keyword(1) GaAs MESFET
Keyword(2) gate-lag
Keyword(3) substrate traps
Keyword(4) current overshoot
Keyword(5) surface state
Keyword(6) device simulation
1st Author's Name A. Wakabayashi
1st Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology()
2nd Author's Name Y. Mitani
2nd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
3rd Author's Name K. Horio
3rd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
Date 1999/1/20
Paper # ED98-186,MW98-149,ICD98-253
Volume (vol) vol.98
Number (no) 523
Page pp.pp.-
#Pages 7
Date of Issue