Presentation 1999/1/20
Process Induced Damage on RFCMOS
E. Morifuji, T. Ohguro, T. Yoshitomi, H. Kimijima, T. Morimoto, H.S. Momose, Y. Katsumata, H. Iwai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have investigated the correlation between process induced damage and RF analog characteristics. Vth matching, fmax, and NFmin were analyzed using mass data. It was found that the redistribution of channel profile due to the damage induced by ion implantation at the gate edge affects the spread of fmax and NFmin. This tendency was not apparent in the spread of fT.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Process damage / RF characteristics / CMOS / Analog / Spread
Paper # ED98-193,MW98-156,ICD98-260
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Conference Date 1999/1/20(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Process Induced Damage on RFCMOS
Sub Title (in English)
Keyword(1) Process damage
Keyword(2) RF characteristics
Keyword(3) CMOS
Keyword(4) Analog
Keyword(5) Spread
1st Author's Name E. Morifuji
1st Author's Affiliation Toshiba Corporation()
2nd Author's Name T. Ohguro
2nd Author's Affiliation Toshiba Corporation
3rd Author's Name T. Yoshitomi
3rd Author's Affiliation Toshiba Corporation
4th Author's Name H. Kimijima
4th Author's Affiliation Toshiba Corporation
5th Author's Name T. Morimoto
5th Author's Affiliation Toshiba Corporation
6th Author's Name H.S. Momose
6th Author's Affiliation Toshiba Corporation
7th Author's Name Y. Katsumata
7th Author's Affiliation Toshiba Corporation
8th Author's Name H. Iwai
8th Author's Affiliation Toshiba Corporation
Date 1999/1/20
Paper # ED98-193,MW98-156,ICD98-260
Volume (vol) vol.98
Number (no) 523
Page pp.pp.-
#Pages 5
Date of Issue