Presentation | 1999/1/20 MOVPE-Grown InP/InGaAs HBTs with a Carbon-Doped Base Layer Shoji Yamahata, kenji Kurishima, Hiroki Nakajima, Noriyuki Watanabe, Yasunobu Ishii, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The new high-temperature dehydrogenation annealing method improves the hole activity of a carbon-doped InGaAs base layer passivated by hydrogen during MOVPE growth, compared to the conventional annealing in a as-grown. A use of this dehydrogenation annealing leads to good performance carbon-doped InP/InGaAs HBTs with a peak f_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InP / InGaAs / HBT / MOVPE / C-doped InGaAs base / Dehydrogenation annealing / Reliability |
Paper # | ED98-184,MW98-147,ICD98-251 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1999/1/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | MOVPE-Grown InP/InGaAs HBTs with a Carbon-Doped Base Layer |
Sub Title (in English) | |
Keyword(1) | InP |
Keyword(2) | InGaAs |
Keyword(3) | HBT |
Keyword(4) | MOVPE |
Keyword(5) | C-doped InGaAs base |
Keyword(6) | Dehydrogenation annealing |
Keyword(7) | Reliability |
1st Author's Name | Shoji Yamahata |
1st Author's Affiliation | NTT System Electronics Laboratories() |
2nd Author's Name | kenji Kurishima |
2nd Author's Affiliation | NTT System Electronics Laboratories |
3rd Author's Name | Hiroki Nakajima |
3rd Author's Affiliation | NTT System Electronics Laboratories |
4th Author's Name | Noriyuki Watanabe |
4th Author's Affiliation | NTT System Electronics Laboratories |
5th Author's Name | Yasunobu Ishii |
5th Author's Affiliation | NTT System Electronics Laboratories |
Date | 1999/1/20 |
Paper # | ED98-184,MW98-147,ICD98-251 |
Volume (vol) | vol.98 |
Number (no) | 523 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |