Presentation 1999/1/20
MOVPE-Grown InP/InGaAs HBTs with a Carbon-Doped Base Layer
Shoji Yamahata, kenji Kurishima, Hiroki Nakajima, Noriyuki Watanabe, Yasunobu Ishii,
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Abstract(in English) The new high-temperature dehydrogenation annealing method improves the hole activity of a carbon-doped InGaAs base layer passivated by hydrogen during MOVPE growth, compared to the conventional annealing in a as-grown. A use of this dehydrogenation annealing leads to good performance carbon-doped InP/InGaAs HBTs with a peak f_ of 229 GHz. In addition, regarding the E/B junction stability, bias-temperature stress tests have been carried out for two kinds of hexagonal emitter-finger direction. In result, the HBT with an emitter oriented parallel to the OF shows little change of both collector and base currents.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InP / InGaAs / HBT / MOVPE / C-doped InGaAs base / Dehydrogenation annealing / Reliability
Paper # ED98-184,MW98-147,ICD98-251
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Conference Date 1999/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MOVPE-Grown InP/InGaAs HBTs with a Carbon-Doped Base Layer
Sub Title (in English)
Keyword(1) InP
Keyword(2) InGaAs
Keyword(3) HBT
Keyword(4) MOVPE
Keyword(5) C-doped InGaAs base
Keyword(6) Dehydrogenation annealing
Keyword(7) Reliability
1st Author's Name Shoji Yamahata
1st Author's Affiliation NTT System Electronics Laboratories()
2nd Author's Name kenji Kurishima
2nd Author's Affiliation NTT System Electronics Laboratories
3rd Author's Name Hiroki Nakajima
3rd Author's Affiliation NTT System Electronics Laboratories
4th Author's Name Noriyuki Watanabe
4th Author's Affiliation NTT System Electronics Laboratories
5th Author's Name Yasunobu Ishii
5th Author's Affiliation NTT System Electronics Laboratories
Date 1999/1/20
Paper # ED98-184,MW98-147,ICD98-251
Volume (vol) vol.98
Number (no) 523
Page pp.pp.-
#Pages 7
Date of Issue