| Presentation | 1999/1/20 Electromigration in gold line of GaAs IC A. Ohta, K. Yajima, N. Higashisaka, T. Heima, T. Hisaka, N. Tanino, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have found voids in gold line of GaAs IC under high temperature DC bias test. The voids moved toward a cathode, in the opposite direction of electron flow. The velocity of a cathode edge is larger than that of an anode edge, bringing expansion of the void. The velocity of voids increased with the current density almost proportionally. The moving mechanisms of a void can be explained by assuming that gold atoms move toward an anode by electromigration. The activation energy of the void velocity was 0.84 eV at the cathode side. The GaAs IC failed at the almost same time as the voids appeared. The activation energy of MTF(mean time to failure)of the IC was 0.89 eV, which was nearly equal to that of the void velocity at the cathode edge of 0.84 eV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Electromigration / Void / Interconnection / Activation energy / GaAs IC |
| Paper # | ED98-190,MW98-153,ICD98-257 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electromigration in gold line of GaAs IC |
| Sub Title (in English) | |
| Keyword(1) | Electromigration |
| Keyword(2) | Void |
| Keyword(3) | Interconnection |
| Keyword(4) | Activation energy |
| Keyword(5) | GaAs IC |
| 1st Author's Name | A. Ohta |
| 1st Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div.() |
| 2nd Author's Name | K. Yajima |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div. |
| 3rd Author's Name | N. Higashisaka |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div. |
| 4th Author's Name | T. Heima |
| 4th Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div. |
| 5th Author's Name | T. Hisaka |
| 5th Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div. |
| 6th Author's Name | N. Tanino |
| 6th Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div. |
| Date | 1999/1/20 |
| Paper # | ED98-190,MW98-153,ICD98-257 |
| Volume (vol) | vol.98 |
| Number (no) | 523 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |