| Presentation | 1999/1/20 30-nm-Gate InAlAs/InGaAs HEMTs Lattice-Matched to InP Substrates and Their RF Characteristics Tetsuya Suemitsu, Tetsuyoshi Ishii, Haruki Yokoyama, Yohtaro Umeda, Takatomo Enoki, Yasunobu Ishii, Toshiaki Tamamura, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The fabrication and the device characteristics of the InP-based HEMTs with a 30-nm gate are reported. A fullerene-incorporated nanocomposite resist is used in electron beam lithography to achieve such a small gate. In addition, the two-step-recess gate technology is used to minimize the effect of the extension of the gate metal. The maximum of the cutoff frequency of the 30-nm-gate HEMTs is 350 GHz, which is one of the highest ever reported for any kind of transistor. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP / InGaAs / HEMT / electron beam lighgraphy / cutoff frequency |
| Paper # | ED98-185,MW98-148,ICD98-252 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 1999/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 30-nm-Gate InAlAs/InGaAs HEMTs Lattice-Matched to InP Substrates and Their RF Characteristics |
| Sub Title (in English) | |
| Keyword(1) | InP |
| Keyword(2) | InGaAs |
| Keyword(3) | HEMT |
| Keyword(4) | electron beam lighgraphy |
| Keyword(5) | cutoff frequency |
| 1st Author's Name | Tetsuya Suemitsu |
| 1st Author's Affiliation | NTT System Electronics Laboratories() |
| 2nd Author's Name | Tetsuyoshi Ishii |
| 2nd Author's Affiliation | NTT Opto-Electronics Laboratories |
| 3rd Author's Name | Haruki Yokoyama |
| 3rd Author's Affiliation | NTT System Electronics Laboratories |
| 4th Author's Name | Yohtaro Umeda |
| 4th Author's Affiliation | NTT System Electronics Laboratories |
| 5th Author's Name | Takatomo Enoki |
| 5th Author's Affiliation | NTT System Electronics Laboratories |
| 6th Author's Name | Yasunobu Ishii |
| 6th Author's Affiliation | NTT System Electronics Laboratories |
| 7th Author's Name | Toshiaki Tamamura |
| 7th Author's Affiliation | NTT Opto-Electronics Laboratories |
| Date | 1999/1/20 |
| Paper # | ED98-185,MW98-148,ICD98-252 |
| Volume (vol) | vol.98 |
| Number (no) | 523 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |