| Presentation | 1999/1/20 The influence of SiON film composition on HIGFET characteristics Katsushi Ohshika, Jun Kuroda, Hiroshi Yanazawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied that the influence of SiON film composition on HIGFET characteristics. The SiON films investigated in the present study were deposited by plasma-enhanced CVD. We used the refractive index of the SiON films as indicator of film composition. We have reported, from the view point of reliability in HIGFET structure, that the gate leak current increases under a reverse gate-drain bias ^<(1)(2)>. Using the SiON film with a refractive index 1.58, we got the best HIGFET performance with no degradation mentioned above. These results are explained by thermal stability of SiON/GaAs interface, according to Spectroscopic Ellipsometry, X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy analysis. When the SiON films with a refractive indexes other than 1.58 were used, the above analyses indicate the formation of As, AsO, As_2O_3, Ga_2O_3 at the interface, which cause the degradation of HIGFET characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HIGFET / SiO / passivation / gate leak current / reliability / interface reaction |
| Paper # | ED98-191,MW98-154,ICD98-258 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The influence of SiON film composition on HIGFET characteristics |
| Sub Title (in English) | |
| Keyword(1) | HIGFET |
| Keyword(2) | SiO |
| Keyword(3) | passivation |
| Keyword(4) | gate leak current |
| Keyword(5) | reliability |
| Keyword(6) | interface reaction |
| 1st Author's Name | Katsushi Ohshika |
| 1st Author's Affiliation | Semiconductor and Integrated Circuit Division, Hitachi Ltd() |
| 2nd Author's Name | Jun Kuroda |
| 2nd Author's Affiliation | Hitachi ULSI Systems Corporation |
| 3rd Author's Name | Hiroshi Yanazawa |
| 3rd Author's Affiliation | Device Development Center |
| Date | 1999/1/20 |
| Paper # | ED98-191,MW98-154,ICD98-258 |
| Volume (vol) | vol.98 |
| Number (no) | 523 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |