Presentation 1999/1/20
The influence of SiON film composition on HIGFET characteristics
Katsushi Ohshika, Jun Kuroda, Hiroshi Yanazawa,
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Abstract(in English) We studied that the influence of SiON film composition on HIGFET characteristics. The SiON films investigated in the present study were deposited by plasma-enhanced CVD. We used the refractive index of the SiON films as indicator of film composition. We have reported, from the view point of reliability in HIGFET structure, that the gate leak current increases under a reverse gate-drain bias ^<(1)(2)>. Using the SiON film with a refractive index 1.58, we got the best HIGFET performance with no degradation mentioned above. These results are explained by thermal stability of SiON/GaAs interface, according to Spectroscopic Ellipsometry, X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy analysis. When the SiON films with a refractive indexes other than 1.58 were used, the above analyses indicate the formation of As, AsO, As_2O_3, Ga_2O_3 at the interface, which cause the degradation of HIGFET characteristics.
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Keyword(in English) HIGFET / SiO / passivation / gate leak current / reliability / interface reaction
Paper # ED98-191,MW98-154,ICD98-258
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Conference Date 1999/1/20(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
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Title (in English) The influence of SiON film composition on HIGFET characteristics
Sub Title (in English)
Keyword(1) HIGFET
Keyword(2) SiO
Keyword(3) passivation
Keyword(4) gate leak current
Keyword(5) reliability
Keyword(6) interface reaction
1st Author's Name Katsushi Ohshika
1st Author's Affiliation Semiconductor and Integrated Circuit Division, Hitachi Ltd()
2nd Author's Name Jun Kuroda
2nd Author's Affiliation Hitachi ULSI Systems Corporation
3rd Author's Name Hiroshi Yanazawa
3rd Author's Affiliation Device Development Center
Date 1999/1/20
Paper # ED98-191,MW98-154,ICD98-258
Volume (vol) vol.98
Number (no) 523
Page pp.pp.-
#Pages 8
Date of Issue