Electronics-Electron Devices(Date:2010/01/06)

Presentation
表紙

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[Date]2010/1/6
[Paper #]
目次

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[Date]2010/1/6
[Paper #]
Design of a Compact UWB Bandpass Filter Using a Microstrip Five-Mode Step-Impedance Resonator

Akihito Beppu,  Zhewang Ma,  Chun-Ping Chen,  Tetsuo Anada,  Yoshio Kobayashi,  

[Date]2010/1/6
[Paper #]ED2009-174,MW2009-157
BIT Line Filter Consisting of FR-4 Substrate at 30GHz

Yu-suke OMOTE,  Futoshi KUROKI,  

[Date]2010/1/6
[Paper #]ED2009-175,MW2009-158
Evaluation of the phase displacement delta by the complex permittivity measuring with resonators

Jun-ichi Sugiyama,  

[Date]2010/1/6
[Paper #]ED2009-176,MW2009-159
Wideband spurious-response suppression using 4-pole coplanar-waveguide resonator filters

Takahiro NAGAFUKU,  Hiroyuki DEGUCHI,  Mikio TSUJI,  Hirotaka FUJITA,  

[Date]2010/1/6
[Paper #]ED2009-177,MW2009-160
An All-Pass/Capacitive-Coupled BPF MMIC Phase Shifter

Ryota KOMARU,  Masatake HANGAI,  Koichi Shigenaga,  Mamiko Yamaguchi,  Morishige HIEDA,  

[Date]2010/1/6
[Paper #]ED2009-178,MW2009-161
Novel Left-Handed Waveguides

Hiroaki IKEUCHI,  Isao OHTA,  Mitsuyoshi KISHIHARA,  Tadashi KAWAI,  Satoshi MATSUMOTO,  

[Date]2010/1/6
[Paper #]ED2009-179,MW2009-162
Analytical and Experimental Considerations on Locking Characteristics of Band-stop Type of Self-injection Locked NRD Guide Gunn Oscillator at 60GHz

Ko-ichi OHUE,  Futoshi KUROKI,  Tsukasa YONEYAMA,  

[Date]2010/1/6
[Paper #]ED2009-180,MW2009-163
InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric

Toru KANAZAWA,  Kazuya WAKABAYASHI,  Hisashi SAITO,  Ryosuke TERAO,  Tomonori TAJIMA,  Shunsuke IKEDA,  Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2010/1/6
[Paper #]ED2009-181,MW2009-164
Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density

Masayuki YAMADA,  Takafumi UESAWA,  Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2010/1/6
[Paper #]ED2009-182,MW2009-165
AlGaN/GaN HEMT having periodic mesa-gate structure

Kota OHI,  Tamotsu HASHIZUME,  

[Date]2010/1/6
[Paper #]ED2009-183,MW2009-166
Development of high-performance ZnO-based FETs : Device applications and microwave performance

Shigehiko SASA,  Kazuto KOIKE,  Toshihiko MAEMOTO,  Mitsuaki YANO,  Masataka INOUE,  

[Date]2010/1/6
[Paper #]ED2009-184,MW2009-167
Interface characteristics of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures

Chihoko Mizue,  Yujin Hori,  Tamotsu Hashizume,  

[Date]2010/1/6
[Paper #]ED2009-185,MW2009-168
Analysis of Transient Response of HfO_2/AlGaN/GaN MOSFETs

Yoshihisa HAYASHI,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  

[Date]2010/1/6
[Paper #]ED2009-186,MW2009-169
Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers

Masanobu HIROKI,  Narihiko MAEDA,  Naoteru SHIGEKAWA,  

[Date]2010/1/6
[Paper #]ED2009-187,MW2009-170
AlGaN channel high electron mobility transistors on AlN substrates

Shin HASHIMOTO,  Katsushi AKITA,  Tatsuya TANABE,  Hideaki NAKAHATA,  Kenichiro TAKEDA,  Hiroshi AMANO,  

[Date]2010/1/6
[Paper #]ED2009-188,MW2009-171
A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity

Kazuki OTA,  Kazuomi ENDO,  Yasuhiro OKAMOTO,  Yuji ANDO,  Hironobu Miyamoto,  Hidenori SHIMAWAKI,  

[Date]2010/1/6
[Paper #]ED2009-189,MW2009-172
A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs

Yasuhiro NAKASHA,  Yoichi KAWANO,  Toshihide SUZUKI,  Toshihiro OHKI,  Tsuyoshi TAKAHASHI,  Kozo MAKIYAMA,  Naoki HARA,  

[Date]2010/1/6
[Paper #]ED2009-190,MW2009-173
A 32-GS/s 6-bit Double-Sampling DAC in InP HBT Technology

Munehiko NAGATANI,  Hideyuki NOSAKA,  Shogo YAMANAKA,  Kimikazu SANO,  Koichi MURATA,  

[Date]2010/1/6
[Paper #]ED2009-191,MW2009-174
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